Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress

V. Iglesias, M. Lanza, K. Zhang, A. Bayerl, M. Porti, M. Nafra, X. Aymerich, G. Benstteter, Z. Y. Shen, G. Bersuker

Research output: Contribution to journalArticlepeer-review

40 Scopus citations

Fingerprint

Dive into the research topics of 'Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress'. Together they form a unique fingerprint.

Biochemistry, Genetics and Molecular Biology

Engineering

Physics

Chemistry

Material Science