Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress

V. Iglesias, M. Lanza, K. Zhang, A. Bayerl, M. Porti, M. Nafra, X. Aymerich, G. Benstteter, Z. Y. Shen, G. Bersuker

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

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