Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress

V. Iglesias; M. Lanza; K. Zhang; A. Bayerl; M. Porti; M. Nafra; X. Aymerich; G. Benstteter; Z. Y. Shen; G. Bersuker

doi:10.1063/1.3637633

Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress

V. Iglesias, M. Lanza, K. Zhang, A. Bayerl, M. Porti, M. Nafra, X. Aymerich, G. Benstteter, Z. Y. Shen, G. Bersuker

Research output: Contribution to journal › Article › peer-review

45 Scopus citations

Abstract

The evolution of the electrical properties of HfO2/SiO 2/Si dielectric stacks under electrical stress has been investigated using atomic force microscope-based techniques. The current through the grain boundaries (GBs), which is found to be higher than thorough the grains, is correlated to a higher density of positively charged defects at the GBs. Electrical stress produces different degradation kinetics in the grains and GBs, with a much shorter time to breakdown in the latter, indicating that GBs facilitate dielectric breakdown in high-k gate stacks. © 2011 American Institute of Physics.

Original language	English (US)
Journal	Applied Physics Letters
Volume	99
Issue number	10
DOIs	https://doi.org/10.1063/1.3637633
State	Published - Sep 5 2011
Externally published	Yes

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Generated from Scopus record by KAUST IRTS on 2021-03-16

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress",

abstract = "The evolution of the electrical properties of HfO2/SiO 2/Si dielectric stacks under electrical stress has been investigated using atomic force microscope-based techniques. The current through the grain boundaries (GBs), which is found to be higher than thorough the grains, is correlated to a higher density of positively charged defects at the GBs. Electrical stress produces different degradation kinetics in the grains and GBs, with a much shorter time to breakdown in the latter, indicating that GBs facilitate dielectric breakdown in high-k gate stacks. {\textcopyright} 2011 American Institute of Physics.",

author = "V. Iglesias and M. Lanza and K. Zhang and A. Bayerl and M. Porti and M. Nafra and X. Aymerich and G. Benstteter and Shen, {Z. Y.} and G. Bersuker",

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T1 - Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress

AU - Iglesias, V.

AU - Lanza, M.

AU - Zhang, K.

AU - Bayerl, A.

AU - Porti, M.

AU - Nafra, M.

AU - Aymerich, X.

AU - Benstteter, G.

AU - Shen, Z. Y.

AU - Bersuker, G.

N1 - Generated from Scopus record by KAUST IRTS on 2021-03-16

PY - 2011/9/5

Y1 - 2011/9/5

N2 - The evolution of the electrical properties of HfO2/SiO 2/Si dielectric stacks under electrical stress has been investigated using atomic force microscope-based techniques. The current through the grain boundaries (GBs), which is found to be higher than thorough the grains, is correlated to a higher density of positively charged defects at the GBs. Electrical stress produces different degradation kinetics in the grains and GBs, with a much shorter time to breakdown in the latter, indicating that GBs facilitate dielectric breakdown in high-k gate stacks. © 2011 American Institute of Physics.

AB - The evolution of the electrical properties of HfO2/SiO 2/Si dielectric stacks under electrical stress has been investigated using atomic force microscope-based techniques. The current through the grain boundaries (GBs), which is found to be higher than thorough the grains, is correlated to a higher density of positively charged defects at the GBs. Electrical stress produces different degradation kinetics in the grains and GBs, with a much shorter time to breakdown in the latter, indicating that GBs facilitate dielectric breakdown in high-k gate stacks. © 2011 American Institute of Physics.

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DO - 10.1063/1.3637633

M3 - Article

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress

Abstract

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