Abstract
The atomic and electronic structure of intrinsic defects in a WSe2 monolayer grown on graphite was revealed by low temperature scanning tunneling microscopy and spectroscopy. Instead of chalcogen vacancies that prevail in other transition metal dichalcogenide materials, intrinsic defects in WSe2 arise surprisingly from single tungsten vacancies, leading to the hole (p-type) doping. Furthermore, we found these defects to dominate the excitonic emission of the WSe2 monolayer at low temperature. Our work provided the first atomic-scale understanding of defect excitons and paved the way toward deciphering the defect structure of single quantum emitters previously discovered in the WSe2 monolayer.
| Original language | English (US) |
|---|---|
| Journal | Physical Review Letters |
| Volume | 119 |
| Issue number | 4 |
| DOIs | |
| State | Published - Jul 25 2017 |
Bibliographical note
KAUST Repository Item: Exported on 2020-10-01Acknowledgements: The work at Fudan was supported by the National Basic Research Program of China (No. 2014CB921601 and No. 2016YFA0301002), the National Natural Science Foundation of China (No. 91421108 and No. 11427902), and the Science and Technology Commission of Shanghai Municipality (16JC1400401). C.-G.W. and W.J. acknowledge support from the National Natural Science Foundation of China (NSFC) under Grants No. 61674171, No. 11274380, No. 91433103, and No. 11622437, the Fundamental Research Funds for the Central Universities, and the Research Funds of Renmin University of China under Grant No. 16XNLQ01. C.-G.W. was supported by the Outstanding Innovative Talents Cultivation Funded Programs of Renmin University of China. The calculations were performed at the Physics Laboratory for High-Performance Computing of Renmin University of China and at the Shanghai Supercomputer Center. L. J. L. acknowledges the support from King Abdullah University of Science and Technology and Academia Sinica Taiwan.