Defect free single crystal thin layer

Rami T. Elafandy; Boon S. Ooi

Defect free single crystal thin layer

Rami T. Elafandy (Inventor), Boon S. Ooi (Inventor)

Research output: Patent

Abstract

A gallium nitride film can be a dislocation free single crystal, which can be prepared by irradiating a surface of a substrate and contacting the surface with an etching solution that can selectively etch at dislocations.

Original language	English (US)
Patent number	US 20160027656 A1
State	Published - Jan 28 2016

Bibliographical note

KAUST Repository Item: Exported on 2019-02-13

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title = "Defect free single crystal thin layer",

abstract = "A gallium nitride film can be a dislocation free single crystal, which can be prepared by irradiating a surface of a substrate and contacting the surface with an etching solution that can selectively etch at dislocations.",

author = "Elafandy, {Rami T.} and Ooi, {Boon S.}",

note = "KAUST Repository Item: Exported on 2019-02-13; US 20160027656 A1",

year = "2016",

month = jan,

day = "28",

language = "English (US)",

type = "Patent",

}

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AU - Ooi, Boon S.

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PY - 2016/1/28

Y1 - 2016/1/28

N2 - A gallium nitride film can be a dislocation free single crystal, which can be prepared by irradiating a surface of a substrate and contacting the surface with an etching solution that can selectively etch at dislocations.

AB - A gallium nitride film can be a dislocation free single crystal, which can be prepared by irradiating a surface of a substrate and contacting the surface with an etching solution that can selectively etch at dislocations.

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M3 - Patent

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ER -

Defect free single crystal thin layer

Abstract

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