Defect free single crystal thin layer

Rami T. Elafandy (Inventor), Boon S. Ooi (Inventor)

Research output: Patent


A gallium nitride film can be a dislocation free single crystal, which can be prepared by irradiating a surface of a substrate and contacting the surface with an etching solution that can selectively etch at dislocations.
Original languageEnglish (US)
Patent numberUS 20160027656 A1
StatePublished - Jan 28 2016

Bibliographical note

KAUST Repository Item: Exported on 2019-02-13


Dive into the research topics of 'Defect free single crystal thin layer'. Together they form a unique fingerprint.

Cite this