Defect-driven interfacial electronic structures at an organic/metal-oxide semiconductor heterojunction

Paul Winget, Laura K. Schirra, David Cornil, Hong Li, Veaceslav Coropceanu, Paul F. Ndione, Ajaya K. Sigdel, David S. Ginley, Joseph J. Berry, Jaewon Shim, Hyungchui Kim, Bernard Kippelen, Jean Luc Brédas*, Oliver L.A. Monti

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

45 Scopus citations


The electronic structure of the hybrid interface between ZnO and the prototypical organic semiconductor PTCDI is investigated via a combination of ultraviolet and X-ray photoelectron spectroscopy (UPS/XPS) and density functional theory (DFT) calculations. The interfacial electronic interactions lead to a large interface dipole due to substantial charge transfer from ZnO to 3,4,9,10-perylenetetracarboxylicdiimide (PTCDI), which can be properly described only when accounting for surface defects that confer ZnO its n-type properties.

Original languageEnglish (US)
Pages (from-to)4711-4716
Number of pages6
JournalAdvanced Materials
Issue number27
StatePublished - Jul 16 2014


  • ZnO
  • interfacial electronic structure
  • organic semiconductor
  • surface defects

ASJC Scopus subject areas

  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering


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