Recently, monolithic integration of III-IV quantum dots (QDs) on Si substrate has attracted much interest due to its potential to integrate photodetectors and lasers in silicon (Si) photonics , . However, the device performance is often limited by the defects induced by the lattice mismatch between III-V materials and Si substrate. In this work, we report results of defect characterization on an InAs QD p-i-n photodetector epitaxially grown on Silicon. The device shows a very low dark current and low frequency noise spectroscopy (LFNS) characterizations were carried out to identify and quantify the deep level within the devices.
|Original language||English (US)|
|Title of host publication||Device Research Conference - Conference Digest, DRC|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|Number of pages||2|
|State||Published - Jun 1 2019|