Engineering
Si Substrate
100%
Photodetector
100%
Gallium Arsenide
100%
Defects
100%
Indium Gallium Arsenide
100%
Quantum Dot
100%
Frequency Noise
66%
Semiconductor Device
33%
Aspect Ratio
33%
Deep Level
33%
Superlattice
33%
Imaging Contrast
33%
Strain
33%
Recombination Lifetime
33%
Atomic Force Microscopy
33%
Waveguide
33%
Activation Energy
33%
Channelling
33%
Material Science
Gallium Arsenide
100%
Photosensor
100%
Indium Gallium Arsenide
100%
Quantum Dot
100%
Density
66%
Capacitance
33%
Superlattice
33%
Semiconductor Device
33%
Waveguide
33%
Atomic Force Microscopy
33%
Physics
Photometer
100%
Quantum Dot
100%
Semiconductor Device
33%
Waveguide
33%
Energy Gaps (Solid State)
33%
Atomic Force Microscopy
33%
Superlattice
33%
Aspect Ratio
33%
Dark Current
33%
Keyphrases
Low-frequency Noise Spectroscopy
100%
Electron Channeling Contrast Imaging
50%
Aspect Ratio Trapping
50%
Buffer Structure
50%
Ultralow Dark Current
50%
Strain Balance
50%