Defect Characterization of InAs/InGaAs Quantum Dot p-i-n Photodetector Grown on GaAs-on-V-Grooved-Si Substrate

Jian Huang, Yating Wan, Daehwan Jung, Justin Norman, Chen Shang, Qiang Li, Kei May Lau, Arthur C. Gossard, John E. Bowers, Baile Chen

Research output: Contribution to journalArticlepeer-review

41 Scopus citations


The performance of semiconductor devices on silicon can be severely degraded by the presence of dislocations incurred during heteroepitaxial growth. Here, the physics of the defect mechanisms, characterization of epitaxial structures, and device properties of waveguide photodetectors (PDs) epitaxially grown on (001) Si are presented. A special GaAs-on-V-grooved-Si template was prepared by combining the aspect ratio trapping effects, superlattice cyclic, and strain-balancing layer stacks. A high quality of buffer structure was characterized by atomic force microscopy (AFM) and electron channeling contrast imaging (ECCI) results. An ultralow dark current density of 3.5 × 10 -7 A/cm 2 at 300 K was measured under -1 V. That is 40× smaller than the best reported value of epitaxially grown InAs/GaAs quantum dot photodetector structure on GaP/Si substrate. Low frequency noise spectroscopy was used to characterize the generation and recombination related deep levels. A trap with an activation energy of 0.4 eV was identified, which is near the middle bandgap. With low frequency noise spectroscopy along with the current-voltage and capacitance-voltage characterizations, the recombination lifetime of 27 μs and trap density of 5.4 × 10 12 cm -3 were estimated.
Original languageEnglish (US)
Pages (from-to)1100-1105
Number of pages6
Issue number5
StatePublished - May 15 2019
Externally publishedYes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-09-18

ASJC Scopus subject areas

  • Biotechnology
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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