Defect-band mediated ferromagnetism in Gd-doped ZnO thin films

S. Venkatesh; J. B. Franklin; M. P. Ryan; J.-S. Lee; Hendrik Ohldag; M. A. McLachlan; N. M. Alford; Iman S. Roqan

doi:10.1063/1.4905585

Defect-band mediated ferromagnetism in Gd-doped ZnO thin films

S. Venkatesh, J. B. Franklin, M. P. Ryan, J.-S. Lee, Hendrik Ohldag, M. A. McLachlan, N. M. Alford, Iman S. Roqan

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43 Scopus citations

Abstract

Gd-doped ZnO thin films prepared by pulsed laser deposition with Gd concentrations varying from 0.02–0.45 atomic percent (at. %) showed deposition oxygen pressure controlled ferromagnetism. Thin films prepared with Gd dopant levels (

Original language	English (US)
Pages (from-to)	013913
Journal	Journal of Applied Physics
Volume	117
Issue number	1
DOIs	https://doi.org/10.1063/1.4905585
State	Published - Jan 7 2015

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The authors acknowledge the financial support from the Academic Excellence Alliance (AEA) Grant from King Abdullah University of Science and Technology (KAUST), Saudi Arabia. We thank Dr. Katharina, Lorenz Instituto Superior Técnico, Universidade de Lisboa, Portugal for fitting the RBS data. Soft X-ray spectroscopic studies were carried out at the SSRL, a Directorate of SLAC and an Office of Science User Facility operated for the U.S. DOE Office of Science by Stanford University. J.S.L. acknowledges partial support by the Department of Energy, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, under Contract No. DE-AC02-76SF00515.

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title = "Defect-band mediated ferromagnetism in Gd-doped ZnO thin films",

abstract = "Gd-doped ZnO thin films prepared by pulsed laser deposition with Gd concentrations varying from 0.02–0.45 atomic percent (at. %) showed deposition oxygen pressure controlled ferromagnetism. Thin films prepared with Gd dopant levels (",

author = "S. Venkatesh and Franklin, {J. B.} and Ryan, {M. P.} and J.-S. Lee and Hendrik Ohldag and McLachlan, {M. A.} and Alford, {N. M.} and Roqan, {Iman S.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The authors acknowledge the financial support from the Academic Excellence Alliance (AEA) Grant from King Abdullah University of Science and Technology (KAUST), Saudi Arabia. We thank Dr. Katharina, Lorenz Instituto Superior T{\'e}cnico, Universidade de Lisboa, Portugal for fitting the RBS data. Soft X-ray spectroscopic studies were carried out at the SSRL, a Directorate of SLAC and an Office of Science User Facility operated for the U.S. DOE Office of Science by Stanford University. J.S.L. acknowledges partial support by the Department of Energy, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, under Contract No. DE-AC02-76SF00515.",

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doi = "10.1063/1.4905585",

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AU - Venkatesh, S.

AU - Franklin, J. B.

AU - Ryan, M. P.

AU - Lee, J.-S.

AU - Ohldag, Hendrik

AU - McLachlan, M. A.

AU - Alford, N. M.

AU - Roqan, Iman S.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The authors acknowledge the financial support from the Academic Excellence Alliance (AEA) Grant from King Abdullah University of Science and Technology (KAUST), Saudi Arabia. We thank Dr. Katharina, Lorenz Instituto Superior Técnico, Universidade de Lisboa, Portugal for fitting the RBS data. Soft X-ray spectroscopic studies were carried out at the SSRL, a Directorate of SLAC and an Office of Science User Facility operated for the U.S. DOE Office of Science by Stanford University. J.S.L. acknowledges partial support by the Department of Energy, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, under Contract No. DE-AC02-76SF00515.

PY - 2015/1/7

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N2 - Gd-doped ZnO thin films prepared by pulsed laser deposition with Gd concentrations varying from 0.02–0.45 atomic percent (at. %) showed deposition oxygen pressure controlled ferromagnetism. Thin films prepared with Gd dopant levels (

AB - Gd-doped ZnO thin films prepared by pulsed laser deposition with Gd concentrations varying from 0.02–0.45 atomic percent (at. %) showed deposition oxygen pressure controlled ferromagnetism. Thin films prepared with Gd dopant levels (

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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Defect-band mediated ferromagnetism in Gd-doped ZnO thin films

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