Defect annealing of InAs-InAlGaAs quantum-dash-in-asymmetric-Well laser

Hery S. Djie; Yang Wang; Boon S. Ooi; Dong Ning Wang; James C.M. Hwang; Gerard T. Dang; Wayne H. Chang

doi:10.1109/LPT.2006.885301

Defect annealing of InAs-InAlGaAs quantum-dash-in-asymmetric-Well laser

Hery S. Djie, Yang Wang, Boon S. Ooi, Dong Ning Wang, James C.M. Hwang, Gerard T. Dang, Wayne H. Chang

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

We report the improvement of ∼1.62-μm wavelength InAs-InAlGaAs quantum-dash-in-asymmetric-well laser performance using rapid thermal annealing. After the postgrowth annealing at 700 °C for 2 min, the internal quantum efficiency is increased from 90% to 93%, and the linewidth of the laser spectrum and the threshold current density is significantly reduced.

Original language	English (US)
Pages (from-to)	2329-2331
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	18
Issue number	22
DOIs	https://doi.org/10.1109/LPT.2006.885301
State	Published - Nov 15 2006
Externally published	Yes

Keywords

Annealing
Defect
Quantum dash
Quantum dots (QDs)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2006.885301

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abstract = "We report the improvement of ∼1.62-μm wavelength InAs-InAlGaAs quantum-dash-in-asymmetric-well laser performance using rapid thermal annealing. After the postgrowth annealing at 700 °C for 2 min, the internal quantum efficiency is increased from 90% to 93%, and the linewidth of the laser spectrum and the threshold current density is significantly reduced.",

keywords = "Annealing, Defect, Quantum dash, Quantum dots (QDs)",

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AU - Djie, Hery S.

AU - Wang, Yang

AU - Ooi, Boon S.

AU - Wang, Dong Ning

AU - Hwang, James C.M.

AU - Dang, Gerard T.

AU - Chang, Wayne H.

PY - 2006/11/15

Y1 - 2006/11/15

N2 - We report the improvement of ∼1.62-μm wavelength InAs-InAlGaAs quantum-dash-in-asymmetric-well laser performance using rapid thermal annealing. After the postgrowth annealing at 700 °C for 2 min, the internal quantum efficiency is increased from 90% to 93%, and the linewidth of the laser spectrum and the threshold current density is significantly reduced.

AB - We report the improvement of ∼1.62-μm wavelength InAs-InAlGaAs quantum-dash-in-asymmetric-well laser performance using rapid thermal annealing. After the postgrowth annealing at 700 °C for 2 min, the internal quantum efficiency is increased from 90% to 93%, and the linewidth of the laser spectrum and the threshold current density is significantly reduced.

KW - Annealing

KW - Defect

KW - Quantum dash

KW - Quantum dots (QDs)

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ER -

Defect annealing of InAs-InAlGaAs quantum-dash-in-asymmetric-Well laser

Abstract

Keywords

ASJC Scopus subject areas

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