We report the improvement of ∼1.62-μm wavelength InAs-InAlGaAs quantum-dash-in-asymmetric-well laser performance using rapid thermal annealing. After the postgrowth annealing at 700 °C for 2 min, the internal quantum efficiency is increased from 90% to 93%, and the linewidth of the laser spectrum and the threshold current density is significantly reduced.
- Quantum dash
- Quantum dots (QDs)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering