Defect annealing of InAs-InAlGaAs quantum-dash-in-asymmetric-Well laser

Hery S. Djie, Yang Wang, Boon S. Ooi, Dong Ning Wang, James C.M. Hwang, Gerard T. Dang, Wayne H. Chang

Research output: Contribution to journalArticlepeer-review

24 Scopus citations


We report the improvement of ∼1.62-μm wavelength InAs-InAlGaAs quantum-dash-in-asymmetric-well laser performance using rapid thermal annealing. After the postgrowth annealing at 700 °C for 2 min, the internal quantum efficiency is increased from 90% to 93%, and the linewidth of the laser spectrum and the threshold current density is significantly reduced.

Original languageEnglish (US)
Pages (from-to)2329-2331
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number22
StatePublished - Nov 15 2006
Externally publishedYes


  • Annealing
  • Defect
  • Quantum dash
  • Quantum dots (QDs)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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