Deep UV Laser at 249 nm Based on GaN Quantum Wells

Maocheng Shan; Yi Zhang; Tinh Binh Tran; Jie’an Jiang; Hanling Long; Zhihua Zheng; An’ge Wang; Wei Guo; Jichun Ye; Changqing Chen; Jiangnan Dai; Xiaohang Li

doi:10.1021/acsphotonics.9b00882

Deep UV Laser at 249 nm Based on GaN Quantum Wells

Maocheng Shan, Yi Zhang, Tinh Binh Tran, Jie’an Jiang, Hanling Long, Zhihua Zheng, An’ge Wang, Wei Guo, Jichun Ye, Changqing Chen, Jiangnan Dai, Xiaohang Li

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Abstract

In this Letter, we report on deep UV laser emitting at 249 nm based on thin GaN quantum wells (QWs) by optical pumping at room temperature. The laser threshold was 190 kW/cm2 that is comparable to state-of-the-art AlGaN QW lasers at similar wavelengths. The laser structure was pseudomorphically grown on a c-plane sapphire substrate by metalorganic chemical vapor deposition, comprising 40 pairs of 4 monolayer (ML) GaN QWs sandwiched by 6 ML AlN quantum barriers (QBs). The low threshold at the wavelength was attributed to large optical and quantum confinement and high quality of the material, interface, and Fabry-Pérot facet. The emissions below and above the threshold were both dominated by transverse electric polarizations thanks to the valence band characteristics of GaN. This work unambiguously demonstrates the potentials of the binary AlN/GaN heterojunctions for high-performance UV emitters.

Original language	English (US)
Pages (from-to)	2387-2391
Number of pages	5
Journal	ACS Photonics
Volume	6
Issue number	10
DOIs	https://doi.org/10.1021/acsphotonics.9b00882
State	Published - Sep 26 2019

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): BAS/1/1664-01-01, REP/1/3189-01-01, URF/1/3437-01-01
Acknowledgements: This work is supported by the National Key Research and Development Program of China (Grant No. 2016YFB0400901), the Key Laboratory of infrared imaging materials and detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences (Grant No. IIMDKFJJ-17-09), the National Natural Science Foundation of China (Grant Nos. 61704062, 61774065, and 61704176), the China Postdoctoral Science Foundation (Grant No. 2016M602287), and the Director Fund of WNLO. The KAUST authors appreciate the support of KAUST Baseline BAS/1/1664-01-01, GCC Research Council REP/1/3189-01-01, and Competitive Research Grants URF/1/3437-01-01 and URF/1/3771-01-01.

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10.1021/acsphotonics.9b00882

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@article{3328680102b64e439d8648434cc22ff3,

title = "Deep UV Laser at 249 nm Based on GaN Quantum Wells",

abstract = "In this Letter, we report on deep UV laser emitting at 249 nm based on thin GaN quantum wells (QWs) by optical pumping at room temperature. The laser threshold was 190 kW/cm2 that is comparable to state-of-the-art AlGaN QW lasers at similar wavelengths. The laser structure was pseudomorphically grown on a c-plane sapphire substrate by metalorganic chemical vapor deposition, comprising 40 pairs of 4 monolayer (ML) GaN QWs sandwiched by 6 ML AlN quantum barriers (QBs). The low threshold at the wavelength was attributed to large optical and quantum confinement and high quality of the material, interface, and Fabry-P{\'e}rot facet. The emissions below and above the threshold were both dominated by transverse electric polarizations thanks to the valence band characteristics of GaN. This work unambiguously demonstrates the potentials of the binary AlN/GaN heterojunctions for high-performance UV emitters.",

author = "Maocheng Shan and Yi Zhang and Tran, {Tinh Binh} and Jie{\textquoteright}an Jiang and Hanling Long and Zhihua Zheng and An{\textquoteright}ge Wang and Wei Guo and Jichun Ye and Changqing Chen and Jiangnan Dai and Xiaohang Li",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): BAS/1/1664-01-01, REP/1/3189-01-01, URF/1/3437-01-01 Acknowledgements: This work is supported by the National Key Research and Development Program of China (Grant No. 2016YFB0400901), the Key Laboratory of infrared imaging materials and detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences (Grant No. IIMDKFJJ-17-09), the National Natural Science Foundation of China (Grant Nos. 61704062, 61774065, and 61704176), the China Postdoctoral Science Foundation (Grant No. 2016M602287), and the Director Fund of WNLO. The KAUST authors appreciate the support of KAUST Baseline BAS/1/1664-01-01, GCC Research Council REP/1/3189-01-01, and Competitive Research Grants URF/1/3437-01-01 and URF/1/3771-01-01.",

year = "2019",

month = sep,

day = "26",

doi = "10.1021/acsphotonics.9b00882",

language = "English (US)",

volume = "6",

pages = "2387--2391",

journal = "ACS Photonics",

issn = "2330-4022",

publisher = "AMER CHEMICAL SOC",

number = "10",

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TY - JOUR

T1 - Deep UV Laser at 249 nm Based on GaN Quantum Wells

AU - Shan, Maocheng

AU - Zhang, Yi

AU - Tran, Tinh Binh

AU - Jiang, Jie’an

AU - Long, Hanling

AU - Zheng, Zhihua

AU - Wang, An’ge

AU - Guo, Wei

AU - Ye, Jichun

AU - Chen, Changqing

AU - Dai, Jiangnan

AU - Li, Xiaohang

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): BAS/1/1664-01-01, REP/1/3189-01-01, URF/1/3437-01-01 Acknowledgements: This work is supported by the National Key Research and Development Program of China (Grant No. 2016YFB0400901), the Key Laboratory of infrared imaging materials and detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences (Grant No. IIMDKFJJ-17-09), the National Natural Science Foundation of China (Grant Nos. 61704062, 61774065, and 61704176), the China Postdoctoral Science Foundation (Grant No. 2016M602287), and the Director Fund of WNLO. The KAUST authors appreciate the support of KAUST Baseline BAS/1/1664-01-01, GCC Research Council REP/1/3189-01-01, and Competitive Research Grants URF/1/3437-01-01 and URF/1/3771-01-01.

PY - 2019/9/26

Y1 - 2019/9/26

N2 - In this Letter, we report on deep UV laser emitting at 249 nm based on thin GaN quantum wells (QWs) by optical pumping at room temperature. The laser threshold was 190 kW/cm2 that is comparable to state-of-the-art AlGaN QW lasers at similar wavelengths. The laser structure was pseudomorphically grown on a c-plane sapphire substrate by metalorganic chemical vapor deposition, comprising 40 pairs of 4 monolayer (ML) GaN QWs sandwiched by 6 ML AlN quantum barriers (QBs). The low threshold at the wavelength was attributed to large optical and quantum confinement and high quality of the material, interface, and Fabry-Pérot facet. The emissions below and above the threshold were both dominated by transverse electric polarizations thanks to the valence band characteristics of GaN. This work unambiguously demonstrates the potentials of the binary AlN/GaN heterojunctions for high-performance UV emitters.

AB - In this Letter, we report on deep UV laser emitting at 249 nm based on thin GaN quantum wells (QWs) by optical pumping at room temperature. The laser threshold was 190 kW/cm2 that is comparable to state-of-the-art AlGaN QW lasers at similar wavelengths. The laser structure was pseudomorphically grown on a c-plane sapphire substrate by metalorganic chemical vapor deposition, comprising 40 pairs of 4 monolayer (ML) GaN QWs sandwiched by 6 ML AlN quantum barriers (QBs). The low threshold at the wavelength was attributed to large optical and quantum confinement and high quality of the material, interface, and Fabry-Pérot facet. The emissions below and above the threshold were both dominated by transverse electric polarizations thanks to the valence band characteristics of GaN. This work unambiguously demonstrates the potentials of the binary AlN/GaN heterojunctions for high-performance UV emitters.

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UR - https://pubs.acs.org/doi/10.1021/acsphotonics.9b00882

UR - http://www.scopus.com/inward/record.url?scp=85072973057&partnerID=8YFLogxK

U2 - 10.1021/acsphotonics.9b00882

DO - 10.1021/acsphotonics.9b00882

M3 - Article

SN - 2330-4022

VL - 6

SP - 2387

EP - 2391

JO - ACS Photonics

JF - ACS Photonics

IS - 10

ER -

Deep UV Laser at 249 nm Based on GaN Quantum Wells

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