Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate

Zachary Lochner; Tsung Ting Kao; Yuh Shiuan Liu; Xiaohang Li; Md Mahbub Satter; Shyh Chiang Shen; P. Douglas Yoder; Jae Hyun Ryou; Russell D. Dupuis; Yong Wei; Hongen Xie; Alec Fischer; Fernando A. Ponce

doi:10.1063/1.4795719

Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate

Zachary Lochner, Tsung Ting Kao, Yuh Shiuan Liu, Xiaohang Li, Md Mahbub Satter, Shyh Chiang Shen, P. Douglas Yoder, Jae Hyun Ryou, Russell D. Dupuis^*, Yong Wei, Hongen Xie, Alec Fischer, Fernando A. Ponce

^*Corresponding author for this work

Computer, Electrical and Mathematical Sciences and Engineering

Research output: Contribution to journal › Article › peer-review

81 Scopus citations

Abstract

Deep-ultraviolet lasing was achieved at 243.5 nm from an Al _x Ga _1-x N-based multi-quantum-well structure using a pulsed excimer laser for optical pumping. The threshold pump power density at room-temperature was 427 kW/cm ² with transverse electric (TE)-polarization-dominant emission. The structure was epitaxially grown by metalorganic chemical vapor deposition on an Al-polar free-standing AlN (0001) substrate. Stimulated emission is achieved by design of the active region, optimizing the growth, and the reduction in defect density afforded by homoepitaxial growth of AlN buffer layers on AlN substrates, demonstrating the feasibility of deep-ultraviolet diode lasers on free-standing AlN.

Original language	English (US)
Article number	101110
Journal	Applied Physics Letters
Volume	102
Issue number	10
DOIs	https://doi.org/10.1063/1.4795719
State	Published - Mar 11 2013

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4795719

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@article{bb8c4e790ba44cfda6b2ea8041c407ce,

title = "Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate",

abstract = " Deep-ultraviolet lasing was achieved at 243.5 nm from an Al x Ga 1-x N-based multi-quantum-well structure using a pulsed excimer laser for optical pumping. The threshold pump power density at room-temperature was 427 kW/cm 2 with transverse electric (TE)-polarization-dominant emission. The structure was epitaxially grown by metalorganic chemical vapor deposition on an Al-polar free-standing AlN (0001) substrate. Stimulated emission is achieved by design of the active region, optimizing the growth, and the reduction in defect density afforded by homoepitaxial growth of AlN buffer layers on AlN substrates, demonstrating the feasibility of deep-ultraviolet diode lasers on free-standing AlN.",

author = "Zachary Lochner and Kao, {Tsung Ting} and Liu, {Yuh Shiuan} and Xiaohang Li and {Mahbub Satter}, Md and Shen, {Shyh Chiang} and {Douglas Yoder}, P. and Ryou, {Jae Hyun} and Dupuis, {Russell D.} and Yong Wei and Hongen Xie and Alec Fischer and Ponce, {Fernando A.}",

year = "2013",

month = mar,

day = "11",

doi = "10.1063/1.4795719",

language = "English (US)",

volume = "102",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AMER INST PHYSICS",

number = "10",

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TY - JOUR

T1 - Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate

AU - Lochner, Zachary

AU - Kao, Tsung Ting

AU - Liu, Yuh Shiuan

AU - Li, Xiaohang

AU - Mahbub Satter, Md

AU - Shen, Shyh Chiang

AU - Douglas Yoder, P.

AU - Ryou, Jae Hyun

AU - Dupuis, Russell D.

AU - Wei, Yong

AU - Xie, Hongen

AU - Fischer, Alec

AU - Ponce, Fernando A.

PY - 2013/3/11

Y1 - 2013/3/11

N2 - Deep-ultraviolet lasing was achieved at 243.5 nm from an Al x Ga 1-x N-based multi-quantum-well structure using a pulsed excimer laser for optical pumping. The threshold pump power density at room-temperature was 427 kW/cm 2 with transverse electric (TE)-polarization-dominant emission. The structure was epitaxially grown by metalorganic chemical vapor deposition on an Al-polar free-standing AlN (0001) substrate. Stimulated emission is achieved by design of the active region, optimizing the growth, and the reduction in defect density afforded by homoepitaxial growth of AlN buffer layers on AlN substrates, demonstrating the feasibility of deep-ultraviolet diode lasers on free-standing AlN.

AB - Deep-ultraviolet lasing was achieved at 243.5 nm from an Al x Ga 1-x N-based multi-quantum-well structure using a pulsed excimer laser for optical pumping. The threshold pump power density at room-temperature was 427 kW/cm 2 with transverse electric (TE)-polarization-dominant emission. The structure was epitaxially grown by metalorganic chemical vapor deposition on an Al-polar free-standing AlN (0001) substrate. Stimulated emission is achieved by design of the active region, optimizing the growth, and the reduction in defect density afforded by homoepitaxial growth of AlN buffer layers on AlN substrates, demonstrating the feasibility of deep-ultraviolet diode lasers on free-standing AlN.

UR - http://www.scopus.com/inward/record.url?scp=84875180180&partnerID=8YFLogxK

U2 - 10.1063/1.4795719

DO - 10.1063/1.4795719

M3 - Article

AN - SCOPUS:84875180180

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 101110

ER -

Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate

Abstract

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