Deep Ultraviolet Copper(I) Thiocyanate (CuSCN) Photodetectors Based on Coplanar Nanogap Electrodes Fabricated via Adhesion Lithography

Gwenhivir Wyatt-Moon, Dimitra G. Georgiadou, James Semple, Thomas D. Anthopoulos*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

Adhesion lithography (a-Lith) is a versatile fabrication technique used to produce asymmetric coplanar electrodes separated by a <15 nm nanogap. Here, we use a-Lith to fabricate deep ultraviolet (DUV) photodetectors by combining coplanar asymmetric nanogap electrode architectures (Au/Al) with solution-processable wide-band-gap (3.5-3.9 eV) p-type semiconductor copper(I) thiocyanate (CuSCN). Because of the device's unique architecture, the detectors exhibit high responsivity (≈79 A W-1) and photosensitivity (≈720) when illuminated with a DUV-range (peak = 280 nm) light-emitting diode at 220 μW cm-2. Interestingly, the photosensitivity of the photodetectors remains fairly high (≈7) even at illuminating intensities down to 0.2 μW cm-2. The scalability of the a-Lith process combined with the unique properties of CuSCN paves the way to new forms of inexpensive, yet high-performance, photodetectors that can be manufactured on arbitrary substrate materials including plastic.

Original languageEnglish (US)
Pages (from-to)41965-41972
Number of pages8
JournalACS Applied Materials and Interfaces
Volume9
Issue number48
DOIs
StatePublished - Dec 6 2017

Keywords

  • coplanar electrodes
  • photodiode
  • photosensitivity
  • responsivity
  • solution-processed

ASJC Scopus subject areas

  • Materials Science(all)

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