Deep level transient spectroscopy (DLTS) of a poly(p-phenylene vinylene) Schottky diode

A. J. Campbell; D. D.C. Bradley; E. Werner; W. Brütting

doi:10.1016/S0379-6779(99)00446-4

Deep level transient spectroscopy (DLTS) of a poly(p-phenylene vinylene) Schottky diode

A. J. Campbell, D. D.C. Bradley, E. Werner, W. Brütting

Research output: Contribution to journal › Article › peer-review

50 Scopus citations

Abstract

Deep level transient spectroscopy measurements have been carried out on ITO/poly(p-phenylenevinylene)/Al organic light emitting diodes that have a depletion region type Schottky barrier at the polymer/metal interface. The very long lived capacitance transients can be successfully described by the de-trapping of p-type majority carriers from a single energy trap level to a Gaussian distribution of transport states. The Gaussian width of 0.10 ± 0.02 eV and trap depth of 0.75 ± 0.05 eV are in excellent agreement with values measured from other unrelated experimental techniques.

Original language	English (US)
Journal	Synthetic Metals
Volume	111
DOIs	https://doi.org/10.1016/S0379-6779(99)00446-4
State	Published - Jun 1 2000
Externally published	Yes

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title = "Deep level transient spectroscopy (DLTS) of a poly(p-phenylene vinylene) Schottky diode",

abstract = "Deep level transient spectroscopy measurements have been carried out on ITO/poly(p-phenylenevinylene)/Al organic light emitting diodes that have a depletion region type Schottky barrier at the polymer/metal interface. The very long lived capacitance transients can be successfully described by the de-trapping of p-type majority carriers from a single energy trap level to a Gaussian distribution of transport states. The Gaussian width of 0.10 ± 0.02 eV and trap depth of 0.75 ± 0.05 eV are in excellent agreement with values measured from other unrelated experimental techniques.",

author = "Campbell, {A. J.} and Bradley, {D. D.C.} and E. Werner and W. Br{\"u}tting",

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year = "2000",

month = jun,

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doi = "10.1016/S0379-6779(99)00446-4",

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T1 - Deep level transient spectroscopy (DLTS) of a poly(p-phenylene vinylene) Schottky diode

AU - Campbell, A. J.

AU - Bradley, D. D.C.

AU - Werner, E.

AU - Brütting, W.

N1 - Generated from Scopus record by KAUST IRTS on 2019-11-27

PY - 2000/6/1

Y1 - 2000/6/1

N2 - Deep level transient spectroscopy measurements have been carried out on ITO/poly(p-phenylenevinylene)/Al organic light emitting diodes that have a depletion region type Schottky barrier at the polymer/metal interface. The very long lived capacitance transients can be successfully described by the de-trapping of p-type majority carriers from a single energy trap level to a Gaussian distribution of transport states. The Gaussian width of 0.10 ± 0.02 eV and trap depth of 0.75 ± 0.05 eV are in excellent agreement with values measured from other unrelated experimental techniques.

AB - Deep level transient spectroscopy measurements have been carried out on ITO/poly(p-phenylenevinylene)/Al organic light emitting diodes that have a depletion region type Schottky barrier at the polymer/metal interface. The very long lived capacitance transients can be successfully described by the de-trapping of p-type majority carriers from a single energy trap level to a Gaussian distribution of transport states. The Gaussian width of 0.10 ± 0.02 eV and trap depth of 0.75 ± 0.05 eV are in excellent agreement with values measured from other unrelated experimental techniques.

UR - https://linkinghub.elsevier.com/retrieve/pii/S0379677999004464

UR - http://www.scopus.com/inward/record.url?scp=0033703033&partnerID=8YFLogxK

U2 - 10.1016/S0379-6779(99)00446-4

DO - 10.1016/S0379-6779(99)00446-4

M3 - Article

SN - 0379-6779

VL - 111

JO - Synthetic Metals

JF - Synthetic Metals

ER -

Deep level transient spectroscopy (DLTS) of a poly(p-phenylene vinylene) Schottky diode

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