Deep energetic trap states in organic photovoltaic devices

Christopher G. Shuttle; Neil D. Treat; Jessica D. Douglas; Jean Frechet; Michael L. Chabinyc

doi:10.1002/aenm.201100541

Deep energetic trap states in organic photovoltaic devices

Christopher G. Shuttle, Neil D. Treat, Jessica D. Douglas, Jean Frechet, Michael L. Chabinyc

Research output: Contribution to journal › Article › peer-review

63 Scopus citations

Abstract

The nature of energetic disorder in organic semiconductors is poorly understood. In photovoltaics, energetic disorder leads to reductions in the open circuit voltage and contributes to other loss processes. In this work, three independent optoelectronic methods were used to determine the long-lived carrier populations in a high efficiency N-alkylthieno[3,4-c]pyrrole-4,6-dione (TPD) based polymer: fullerene solar cell. In the TPD co-polymer, all methods indicate the presence of a long-lived carrier population of ∼ 10 15 cm -3 on timescales ≤100 μs. Additionally, the behavior of these photovoltaic devices under optical bias is consistent with deep energetic lying trap states. Comparative measurements were also performed on high efficiency poly-3-hexylthiophene (P3HT): fullerene solar cells; however a similar long-lived carrier population was not observed. This observation is consistent with a higher acceptor concentration (doping) in P3HT than in the TPD-based copolymer. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Original language	English (US)
Pages (from-to)	111-119
Number of pages	9
Journal	Advanced Energy Materials
Volume	2
Issue number	1
DOIs	https://doi.org/10.1002/aenm.201100541
State	Published - Nov 23 2011

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: Work at UCSB was supported as part of the Center for Energy Efficient Materials, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Award Number DE-SC0001009 and at UCB by the "Plastics Electronics" program at Lawrence Berkeley National Laboratory funded by the Director, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. We thank Claudia Piliego and Claire H. Woo for advice about device fabrication with PBDTTPD.

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment
General Materials Science

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1002/aenm.201100541

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title = "Deep energetic trap states in organic photovoltaic devices",

abstract = "The nature of energetic disorder in organic semiconductors is poorly understood. In photovoltaics, energetic disorder leads to reductions in the open circuit voltage and contributes to other loss processes. In this work, three independent optoelectronic methods were used to determine the long-lived carrier populations in a high efficiency N-alkylthieno[3,4-c]pyrrole-4,6-dione (TPD) based polymer: fullerene solar cell. In the TPD co-polymer, all methods indicate the presence of a long-lived carrier population of ∼ 10 15 cm -3 on timescales ≤100 μs. Additionally, the behavior of these photovoltaic devices under optical bias is consistent with deep energetic lying trap states. Comparative measurements were also performed on high efficiency poly-3-hexylthiophene (P3HT): fullerene solar cells; however a similar long-lived carrier population was not observed. This observation is consistent with a higher acceptor concentration (doping) in P3HT than in the TPD-based copolymer. {\textcopyright} 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",

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note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: Work at UCSB was supported as part of the Center for Energy Efficient Materials, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Award Number DE-SC0001009 and at UCB by the {"}Plastics Electronics{"} program at Lawrence Berkeley National Laboratory funded by the Director, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. We thank Claudia Piliego and Claire H. Woo for advice about device fabrication with PBDTTPD.",

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N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: Work at UCSB was supported as part of the Center for Energy Efficient Materials, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Award Number DE-SC0001009 and at UCB by the "Plastics Electronics" program at Lawrence Berkeley National Laboratory funded by the Director, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. We thank Claudia Piliego and Claire H. Woo for advice about device fabrication with PBDTTPD.

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N2 - The nature of energetic disorder in organic semiconductors is poorly understood. In photovoltaics, energetic disorder leads to reductions in the open circuit voltage and contributes to other loss processes. In this work, three independent optoelectronic methods were used to determine the long-lived carrier populations in a high efficiency N-alkylthieno[3,4-c]pyrrole-4,6-dione (TPD) based polymer: fullerene solar cell. In the TPD co-polymer, all methods indicate the presence of a long-lived carrier population of ∼ 10 15 cm -3 on timescales ≤100 μs. Additionally, the behavior of these photovoltaic devices under optical bias is consistent with deep energetic lying trap states. Comparative measurements were also performed on high efficiency poly-3-hexylthiophene (P3HT): fullerene solar cells; however a similar long-lived carrier population was not observed. This observation is consistent with a higher acceptor concentration (doping) in P3HT than in the TPD-based copolymer. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

AB - The nature of energetic disorder in organic semiconductors is poorly understood. In photovoltaics, energetic disorder leads to reductions in the open circuit voltage and contributes to other loss processes. In this work, three independent optoelectronic methods were used to determine the long-lived carrier populations in a high efficiency N-alkylthieno[3,4-c]pyrrole-4,6-dione (TPD) based polymer: fullerene solar cell. In the TPD co-polymer, all methods indicate the presence of a long-lived carrier population of ∼ 10 15 cm -3 on timescales ≤100 μs. Additionally, the behavior of these photovoltaic devices under optical bias is consistent with deep energetic lying trap states. Comparative measurements were also performed on high efficiency poly-3-hexylthiophene (P3HT): fullerene solar cells; however a similar long-lived carrier population was not observed. This observation is consistent with a higher acceptor concentration (doping) in P3HT than in the TPD-based copolymer. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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Deep energetic trap states in organic photovoltaic devices

Abstract

Bibliographical note

ASJC Scopus subject areas

UN SDGs

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