The breakdown (BD) sequence in high-K/interfacial layer (HK/IL) stacks for time-dependent dielectric breakdown (TDDB) has remained controversial for sub-45 nm CMOS nodes, as many attempts to decode it were not based on proper experimental methods. Know-how of this sequence is critical to the future design for reliability of FinFETs and nanosheet transistors. We present here the use of radiation fluence as a tool to precisely tune the defect density in the dielectric layer, which jointly with the statistical study of the soft, progressive and hard BD, allow us to infer the BD sequence using a single HfO2–SiOx bilayered MOS structure.
Bibliographical noteKAUST Repository Item: Exported on 2022-05-26
Acknowledgements: This work is supported by MINCyT under Contracts PICT 2016/0579, PICTE 2018/0192 and PME 2015/0196, CONICET under Project PIP-11220130100077CO and UTN under Projects PID-UTN EIUTIBA4395TC3, CCUTIBA4764TC, CCUTNBA6615, CCUTNBA5182 and MATUNBA4936. N. R. would like to acknowledge the support of the A*STAR BRENAIC Project (A18A5b0056) as well as EDB-IPP Project (IGIPAMD2001) for device characterization facility access as well as article processing fee payment. The authors would like to thank Prof. Michel Bosman from National University of Singapore (NUS) for his support with the TEM study included in this work.