Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects

Fernando L. Aguirre; Alok Ranjan; Nagarajan Raghavan; Andrea Padovani; Sebastian Matias Pazos; Nahuel Vega; Nahuel Muller; Mario Debray; Joel Molina-Reyes; Kin Leong Pey; Felix Palumbo

doi:10.35848/1882-0786/ac345d

Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects

Fernando L. Aguirre, Alok Ranjan, Nagarajan Raghavan, Andrea Padovani, Sebastian Matias Pazos, Nahuel Vega, Nahuel Muller, Mario Debray, Joel Molina-Reyes, Kin Leong Pey, Felix Palumbo

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The breakdown (BD) sequence in high-K/interfacial layer (HK/IL) stacks for time-dependent dielectric breakdown (TDDB) has remained controversial for sub-45 nm CMOS nodes, as many attempts to decode it were not based on proper experimental methods. Know-how of this sequence is critical to the future design for reliability of FinFETs and nanosheet transistors. We present here the use of radiation fluence as a tool to precisely tune the defect density in the dielectric layer, which jointly with the statistical study of the soft, progressive and hard BD, allow us to infer the BD sequence using a single HfO2–SiOx bilayered MOS structure.

Original language	English (US)
Pages (from-to)	121001
Journal	APPLIED PHYSICS EXPRESS
Volume	14
Issue number	12
DOIs	https://doi.org/10.35848/1882-0786/ac345d
State	Published - Nov 10 2021
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2022-05-26
Acknowledgements: This work is supported by MINCyT under Contracts PICT 2016/0579, PICTE 2018/0192 and PME 2015/0196, CONICET under Project PIP-11220130100077CO and UTN under Projects PID-UTN EIUTIBA4395TC3, CCUTIBA4764TC, CCUTNBA6615, CCUTNBA5182 and MATUNBA4936. N. R. would like to acknowledge the support of the A*STAR BRENAIC Project (A18A5b0056) as well as EDB-IPP Project (IGIPAMD2001) for device characterization facility access as well as article processing fee payment. The authors would like to thank Prof. Michel Bosman from National University of Singapore (NUS) for his support with the TEM study included in this work.

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10.35848/1882-0786/ac345d

https://repository.kaust.edu.sa/bitstream/10754/678256/1/Aguirre_2021_Appl._Phys._Express_14_121001_removed.pdf

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Aguirre, F. L., Ranjan, A., Raghavan, N., Padovani, A., Pazos, S. M., Vega, N., Muller, N., Debray, M., Molina-Reyes, J., Pey, K. L., & Palumbo, F. (2021). Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects. APPLIED PHYSICS EXPRESS, 14(12), 121001. https://doi.org/10.35848/1882-0786/ac345d

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title = "Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects",

abstract = "The breakdown (BD) sequence in high-K/interfacial layer (HK/IL) stacks for time-dependent dielectric breakdown (TDDB) has remained controversial for sub-45 nm CMOS nodes, as many attempts to decode it were not based on proper experimental methods. Know-how of this sequence is critical to the future design for reliability of FinFETs and nanosheet transistors. We present here the use of radiation fluence as a tool to precisely tune the defect density in the dielectric layer, which jointly with the statistical study of the soft, progressive and hard BD, allow us to infer the BD sequence using a single HfO2–SiOx bilayered MOS structure.",

author = "Aguirre, {Fernando L.} and Alok Ranjan and Nagarajan Raghavan and Andrea Padovani and Pazos, {Sebastian Matias} and Nahuel Vega and Nahuel Muller and Mario Debray and Joel Molina-Reyes and Pey, {Kin Leong} and Felix Palumbo",

note = "KAUST Repository Item: Exported on 2022-05-26 Acknowledgements: This work is supported by MINCyT under Contracts PICT 2016/0579, PICTE 2018/0192 and PME 2015/0196, CONICET under Project PIP-11220130100077CO and UTN under Projects PID-UTN EIUTIBA4395TC3, CCUTIBA4764TC, CCUTNBA6615, CCUTNBA5182 and MATUNBA4936. N. R. would like to acknowledge the support of the A*STAR BRENAIC Project (A18A5b0056) as well as EDB-IPP Project (IGIPAMD2001) for device characterization facility access as well as article processing fee payment. The authors would like to thank Prof. Michel Bosman from National University of Singapore (NUS) for his support with the TEM study included in this work.",

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doi = "10.35848/1882-0786/ac345d",

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Aguirre, FL, Ranjan, A, Raghavan, N, Padovani, A, Pazos, SM, Vega, N, Muller, N, Debray, M, Molina-Reyes, J, Pey, KL & Palumbo, F 2021, 'Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects', APPLIED PHYSICS EXPRESS, vol. 14, no. 12, pp. 121001. https://doi.org/10.35848/1882-0786/ac345d

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T1 - Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects

AU - Aguirre, Fernando L.

AU - Ranjan, Alok

AU - Raghavan, Nagarajan

AU - Padovani, Andrea

AU - Pazos, Sebastian Matias

AU - Vega, Nahuel

AU - Muller, Nahuel

AU - Debray, Mario

AU - Molina-Reyes, Joel

AU - Pey, Kin Leong

AU - Palumbo, Felix

N1 - KAUST Repository Item: Exported on 2022-05-26 Acknowledgements: This work is supported by MINCyT under Contracts PICT 2016/0579, PICTE 2018/0192 and PME 2015/0196, CONICET under Project PIP-11220130100077CO and UTN under Projects PID-UTN EIUTIBA4395TC3, CCUTIBA4764TC, CCUTNBA6615, CCUTNBA5182 and MATUNBA4936. N. R. would like to acknowledge the support of the A*STAR BRENAIC Project (A18A5b0056) as well as EDB-IPP Project (IGIPAMD2001) for device characterization facility access as well as article processing fee payment. The authors would like to thank Prof. Michel Bosman from National University of Singapore (NUS) for his support with the TEM study included in this work.

PY - 2021/11/10

Y1 - 2021/11/10

N2 - The breakdown (BD) sequence in high-K/interfacial layer (HK/IL) stacks for time-dependent dielectric breakdown (TDDB) has remained controversial for sub-45 nm CMOS nodes, as many attempts to decode it were not based on proper experimental methods. Know-how of this sequence is critical to the future design for reliability of FinFETs and nanosheet transistors. We present here the use of radiation fluence as a tool to precisely tune the defect density in the dielectric layer, which jointly with the statistical study of the soft, progressive and hard BD, allow us to infer the BD sequence using a single HfO2–SiOx bilayered MOS structure.

AB - The breakdown (BD) sequence in high-K/interfacial layer (HK/IL) stacks for time-dependent dielectric breakdown (TDDB) has remained controversial for sub-45 nm CMOS nodes, as many attempts to decode it were not based on proper experimental methods. Know-how of this sequence is critical to the future design for reliability of FinFETs and nanosheet transistors. We present here the use of radiation fluence as a tool to precisely tune the defect density in the dielectric layer, which jointly with the statistical study of the soft, progressive and hard BD, allow us to infer the BD sequence using a single HfO2–SiOx bilayered MOS structure.

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U2 - 10.35848/1882-0786/ac345d

DO - 10.35848/1882-0786/ac345d

M3 - Article

SN - 1882-0786

VL - 14

SP - 121001

JO - APPLIED PHYSICS EXPRESS

JF - APPLIED PHYSICS EXPRESS

IS - 12

ER -

Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects

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