Decomposition and uniformity of material gases in GaN MOVPE

A. Hirako; K. Ohkawa

doi:10.1002/1521-396X(200212)194:2<489::AID-PSSA489>3.0.CO;2-K

Decomposition and uniformity of material gases in GaN MOVPE

A. Hirako, K. Ohkawa^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

The characteristics of metalorganic vapor-phase epitaxy (MOVPE)-grown GaN layers have been compared with the chemical features of the gaseous phase during growth. The chemical features were evaluated by growth simulation. Two- and three-flow methods were used for GaN MOVPE. It was found both by growth and by simulation that the two-flow is superior to the three-flow method as regards uniformity and quality of the GaN layers.

Original language	English (US)
Pages (from-to)	489-493
Number of pages	5
Journal	Physica Status Solidi (A) Applied Research
Volume	194
Issue number	2 SPEC.
DOIs	https://doi.org/10.1002/1521-396X(200212)194:2<489::AID-PSSA489>3.0.CO;2-K
State	Published - Dec 2002
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/1521-396X(200212)194:2<489::AID-PSSA489>3.0.CO;2-K

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abstract = "The characteristics of metalorganic vapor-phase epitaxy (MOVPE)-grown GaN layers have been compared with the chemical features of the gaseous phase during growth. The chemical features were evaluated by growth simulation. Two- and three-flow methods were used for GaN MOVPE. It was found both by growth and by simulation that the two-flow is superior to the three-flow method as regards uniformity and quality of the GaN layers.",

author = "A. Hirako and K. Ohkawa",

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AU - Hirako, A.

AU - Ohkawa, K.

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AB - The characteristics of metalorganic vapor-phase epitaxy (MOVPE)-grown GaN layers have been compared with the chemical features of the gaseous phase during growth. The chemical features were evaluated by growth simulation. Two- and three-flow methods were used for GaN MOVPE. It was found both by growth and by simulation that the two-flow is superior to the three-flow method as regards uniformity and quality of the GaN layers.

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M3 - Article

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Decomposition and uniformity of material gases in GaN MOVPE

Abstract

ASJC Scopus subject areas

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