Decomposition and uniformity of material gases in GaN MOVPE

A. Hirako, K. Ohkawa*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations


The characteristics of metalorganic vapor-phase epitaxy (MOVPE)-grown GaN layers have been compared with the chemical features of the gaseous phase during growth. The chemical features were evaluated by growth simulation. Two- and three-flow methods were used for GaN MOVPE. It was found both by growth and by simulation that the two-flow is superior to the three-flow method as regards uniformity and quality of the GaN layers.

Original languageEnglish (US)
Pages (from-to)489-493
Number of pages5
JournalPhysica Status Solidi (A) Applied Research
Issue number2 SPEC.
StatePublished - Dec 2002
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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