We applied a damage-free substrate removal technique using photoelectrochemical etching (PECE) by incorporating sacrificial layer In0.12Ga0.88N single quantum well (SL-SQW) types in semipolar (202 ̅1) flip-chip laser diode (FC-LD) structures. Although 40-nm type I promoted the development of high-quality green active region (AR) devices in terms of managing strain relaxation, processing was required under low-temperature KOH. However, 10-nm type II exhibited a smooth n-type GaN surface with room-temperature KOH, thereby promoting the applicability of the proposed technique for either a short light emitter or a combination with type I. The temperature-dependent PECE of SL-SQW types is important in realizing advanced FC-LDs.
Bibliographical noteKAUST Repository Item: Exported on 2021-04-05
Acknowledgements: This work was funded by the King Abdulaziz City for Science and Technology (KACST) Technology Innovations Center (TIC) program and the KACST-KAUST-UCSB Solid State Lighting Program. Additional support was provided by the Solid State Lighting and Energy Electronics Center (SSLEEC) at UCSB. A portion of this work was done in the UCSB nanofabrication facility, part of the NSF NNIN network (ECS-0335765), as well as the UCSB MRL, which is supported by the NSF MRSEC program (DMR1121053)
This publication acknowledges KAUST support, but has no KAUST affiliated authors.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)