Damage-free substrate removal technique: Wet undercut etching of semipolar (20-21) laser structures by incorporation of un/relaxed sacrificial layer single quantum well

Arwa Saud Abbas; Ahmed Alyamani; Shuji Nakamura; Steven P. DenBaars

doi:10.35848/1347-4065/abf36d

Damage-free substrate removal technique: Wet undercut etching of semipolar (20-21) laser structures by incorporation of un/relaxed sacrificial layer single quantum well

Arwa Saud Abbas, Ahmed Alyamani, Shuji Nakamura, Steven P. DenBaars

Research output: Contribution to journal › Article › peer-review

Abstract

We applied a damage-free substrate removal technique using photoelectrochemical etching (PECE) by incorporating sacrificial layer In0.12Ga0.88N single quantum well (SL-SQW) types in semipolar (202 ̅1) flip-chip laser diode (FC-LD) structures. Although 40-nm type I promoted the development of high-quality green active region (AR) devices in terms of managing strain relaxation, processing was required under low-temperature KOH. However, 10-nm type II exhibited a smooth n-type GaN surface with room-temperature KOH, thereby promoting the applicability of the proposed technique for either a short light emitter or a combination with type I. The temperature-dependent PECE of SL-SQW types is important in realizing advanced FC-LDs.

Original language	English (US)
Journal	Japanese Journal of Applied Physics
DOIs	https://doi.org/10.35848/1347-4065/abf36d
State	Published - Mar 30 2021
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2021-04-05
Acknowledgements: This work was funded by the King Abdulaziz City for Science and Technology (KACST) Technology Innovations Center (TIC) program and the KACST-KAUST-UCSB Solid State Lighting Program. Additional support was provided by the Solid State Lighting and Energy Electronics Center (SSLEEC) at UCSB. A portion of this work was done in the UCSB nanofabrication facility, part of the NSF NNIN network (ECS-0335765), as well as the UCSB MRL, which is supported by the NSF MRSEC program (DMR1121053)
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.35848/1347-4065/abf36d

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@article{a4bf36fabc7e498182cbb318e61ad2a5,

title = "Damage-free substrate removal technique: Wet undercut etching of semipolar (20-21) laser structures by incorporation of un/relaxed sacrificial layer single quantum well",

abstract = "We applied a damage-free substrate removal technique using photoelectrochemical etching (PECE) by incorporating sacrificial layer In0.12Ga0.88N single quantum well (SL-SQW) types in semipolar (202 ̅1) flip-chip laser diode (FC-LD) structures. Although 40-nm type I promoted the development of high-quality green active region (AR) devices in terms of managing strain relaxation, processing was required under low-temperature KOH. However, 10-nm type II exhibited a smooth n-type GaN surface with room-temperature KOH, thereby promoting the applicability of the proposed technique for either a short light emitter or a combination with type I. The temperature-dependent PECE of SL-SQW types is important in realizing advanced FC-LDs.",

author = "Abbas, {Arwa Saud} and Ahmed Alyamani and Shuji Nakamura and DenBaars, {Steven P.}",

note = "KAUST Repository Item: Exported on 2021-04-05 Acknowledgements: This work was funded by the King Abdulaziz City for Science and Technology (KACST) Technology Innovations Center (TIC) program and the KACST-KAUST-UCSB Solid State Lighting Program. Additional support was provided by the Solid State Lighting and Energy Electronics Center (SSLEEC) at UCSB. A portion of this work was done in the UCSB nanofabrication facility, part of the NSF NNIN network (ECS-0335765), as well as the UCSB MRL, which is supported by the NSF MRSEC program (DMR1121053) This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

year = "2021",

month = mar,

day = "30",

doi = "10.35848/1347-4065/abf36d",

language = "English (US)",

journal = "Japanese Journal of Applied Physics",

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publisher = "Japan Society of Applied Physics",

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T1 - Damage-free substrate removal technique: Wet undercut etching of semipolar (20-21) laser structures by incorporation of un/relaxed sacrificial layer single quantum well

AU - Abbas, Arwa Saud

AU - Alyamani, Ahmed

AU - Nakamura, Shuji

AU - DenBaars, Steven P.

N1 - KAUST Repository Item: Exported on 2021-04-05 Acknowledgements: This work was funded by the King Abdulaziz City for Science and Technology (KACST) Technology Innovations Center (TIC) program and the KACST-KAUST-UCSB Solid State Lighting Program. Additional support was provided by the Solid State Lighting and Energy Electronics Center (SSLEEC) at UCSB. A portion of this work was done in the UCSB nanofabrication facility, part of the NSF NNIN network (ECS-0335765), as well as the UCSB MRL, which is supported by the NSF MRSEC program (DMR1121053) This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2021/3/30

Y1 - 2021/3/30

N2 - We applied a damage-free substrate removal technique using photoelectrochemical etching (PECE) by incorporating sacrificial layer In0.12Ga0.88N single quantum well (SL-SQW) types in semipolar (202 ̅1) flip-chip laser diode (FC-LD) structures. Although 40-nm type I promoted the development of high-quality green active region (AR) devices in terms of managing strain relaxation, processing was required under low-temperature KOH. However, 10-nm type II exhibited a smooth n-type GaN surface with room-temperature KOH, thereby promoting the applicability of the proposed technique for either a short light emitter or a combination with type I. The temperature-dependent PECE of SL-SQW types is important in realizing advanced FC-LDs.

AB - We applied a damage-free substrate removal technique using photoelectrochemical etching (PECE) by incorporating sacrificial layer In0.12Ga0.88N single quantum well (SL-SQW) types in semipolar (202 ̅1) flip-chip laser diode (FC-LD) structures. Although 40-nm type I promoted the development of high-quality green active region (AR) devices in terms of managing strain relaxation, processing was required under low-temperature KOH. However, 10-nm type II exhibited a smooth n-type GaN surface with room-temperature KOH, thereby promoting the applicability of the proposed technique for either a short light emitter or a combination with type I. The temperature-dependent PECE of SL-SQW types is important in realizing advanced FC-LDs.

UR - http://hdl.handle.net/10754/668494

UR - https://iopscience.iop.org/article/10.35848/1347-4065/abf36d

U2 - 10.35848/1347-4065/abf36d

DO - 10.35848/1347-4065/abf36d

M3 - Article

SN - 0021-4922

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

ER -

Damage-free substrate removal technique: Wet undercut etching of semipolar (20-21) laser structures by incorporation of un/relaxed sacrificial layer single quantum well

Abstract

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