CVD Technology for 2-D Materials

Pin-Chun Shen, Yuxuan Lin, Haozhe Wang, Ji-Hoon Park, Wei Sun Leong, Ang-Yu Lu, Tomas Palacios, Jing Kong

Research output: Contribution to journalArticlepeer-review

42 Scopus citations


The urgently growing demand for lowering the power consumption and increasing the performance in electronic and optoelectronic systems has been driving the scientific community to explore new materials and device architectures. In light of this, 2-D materials including graphene, hexagonal boron nitride, and transition metal dichalcogenides have the potential to revolutionize our semiconductor industry by scaling the devices down to the atomic level. These materials benefit from several unique properties, endowed by their 2-D nature, such as surface free of dangling bonds, ultimate scaling limit in vertical dimension for almost perfect gate electrostatic control, and strong excitonic effects. However, to realize the full potential of these materials, it is required to develop a large-scale synthesis method. For this, chemical vapor deposition (CVD) has shown great promise to synthesize these high-quality 2-D crystals with scalable-production capability. In this review, we will give a brief overview of the current state of the art in CVD growth of 2-D materials and its prospects for next-generation device applications. First, we will review several representative growth techniques in which large area, high quality 2-D materials are demonstrated. We will then describe the status of the development of electronics, optoelectronics, and sensors based on CVD-grown 2-D materials. Finally, we will discuss the major challenges and future opportunities in this rapidly advancing field of research.
Original languageEnglish (US)
Pages (from-to)4040-4052
Number of pages13
JournalIEEE Transactions on Electron Devices
Issue number10
StatePublished - Oct 2018
Externally publishedYes

Bibliographical note

KAUST Repository Item: Exported on 2021-03-10
Acknowledged KAUST grant number(s): OSR- 2015-CRG4-2634
Acknowledgements: The authors acknowledge support from the NSF Center for Energy Efficient Electronics Science (E3S, NSF Grant No. ECCS-0939514), the STC Center for Integrated Quantum Materials (NSF Grant No. DMR-1231319), AFOSR FATE MURI (Grant No. FA9550-15-1-0514), NSF DMR/ECCS-1509197, support from King Abdullah University of Science and Technology under Contract (OSR- 2015-CRG4-2634), NASA Langley Research Center (Grant No. NNX14AH11A), and Massachusetts Institute of Technology Institute for Soldier Nanotechnologies (Grant No. W911NF-13-0001, T.O.3).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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