We report short circuit current (Jsc) enhancement in crystalline silicon (C-Si) photovoltaic (PV) using low-cost Ohmic contact engineering by integration of Nickel mono-silicide (NiSi) for back contact metallization as an alternative to the status quo of using expensive screen printed silver (Ag). We show 2.6 mA/cm2 enhancement in the short circuit current (Jsc) and 1.2 % increment in the efficiency by improving the current collection due to the low specific contact resistance of the NiSi on the heavily Boron (B) doped Silicon (Si) interface.
|Original language||English (US)|
|Title of host publication||2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)|
|Publisher||Institute of Electrical and Electronics Engineers (IEEE)|
|Number of pages||4|
|State||Published - Nov 30 2016|