Cu-doped SiO2 induced atomic interdiffusion in semiconductor nano heterostructures

V. Hongpinyo*, Y. H. Ding, J. Anderson, H. S. Djie, B. S. Ooi, R. R. Du, A. Ganjoo, H. Jain

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


We investigate the influence of Cu impurity incorporation into the silica cap during the sputtering process on the enhancement of intermixing rate of semiconductor quantum nanostructures. Using the Cu:SiO2 process, we observed bandgap shift of over 200 meV from various GaAs-based quantum well (QW) heterostructures such as GaAs/AlGaAs, InAlGaP/GaAs, and GaAs/AlGaAs systems at significantly lower activation energy than the conventional impurity free vacancy disordering process (IFVD) using undoped SiO2 cap. The results suggest that the Cu:SiO2 process is a promising intermixing technique for the monolithic integration of multiple active/passive photonic components on GaAs-based material systems.

Original languageEnglish (US)
Title of host publicationSemiconductor Photonics
Subtitle of host publicationNano-Structured Materials and Devices
PublisherTrans Tech Publications
Number of pages3
ISBN (Print)0878494715, 9780878494712
StatePublished - 2008
Externally publishedYes
EventInternational Conference on Materials for Advanced Technologies, ICMAT 2007 - , Singapore
Duration: Jul 1 2007Jul 6 2007

Publication series

NameAdvanced Materials Research
ISSN (Print)1022-6680


OtherInternational Conference on Materials for Advanced Technologies, ICMAT 2007


  • Impurity diffusion
  • Impurity free vacancy induced disordering
  • Photonic integrated circuits
  • Quantum well
  • Quantum well intermixing

ASJC Scopus subject areas

  • Engineering(all)


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