Cross beam lithography (FIB+EBL) and dip pen nanolithography for nanoparticle conductivity measurements

Stefano Cabrini*, Robert J. Barsotti, Alessandro Carpentiero, Luca Businaro, Remo Proietti Zaccaria, Francesco Stellacci, Enzo Di Fabrizio

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


Focused ion beam lithography is a very powerful technique for directly writing patterns on many substrates, it is a maskless and resistless technique that allows a very wide range of applications, providing a resolution down to 10 nm. Using a system composed by a 30 keV gallium ion beam column plus a 30 keV electron beam, nanogaps for electrical measurements of nanoparticle were fabricated with a resolution down to the nanometer scale, by exploiting FIB milling (FIBM) and electron beam lithography (EBL). Starting from prepatterned samples a square pattern reduces the width of the gold wire and a narrow line pattern opens a gap of less than 7 nm. Electrical measurements and AFM tapping mode imaging were performed on the gaps. We patterned the ends of the gold leads with dip pen nanolithography using mercapto-undecanol (MUD) to form a bond between the nanoparticle and the alcohol group attached to the gold surface. After this assembly, devices showed an increase in conductivity (10-100-fold increase). Measuring the device again one week later, we saw almost no change in conductivity, showing that we deposit a multiparticle cluster and measure its conductivity.

Original languageEnglish (US)
Pages (from-to)2806-2810
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number6
StatePublished - Nov 2005
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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