Critical ultra low-k TDDB reliability issues for advanced CMOS technologies

F. Chen; M. Shinosky; B. Li; J. Gambino; S. Mongeon; P. Pokrinchak; J. Aitken; D. Badami; M. Angyal; R. Achanta; G. Bonilla; G. Yang; P. Liu; K. Li; J. Sudijono; Y. Tan; T. J. Tang; C. Child

doi:10.1109/IRPS.2009.5173298

Critical ultra low-k TDDB reliability issues for advanced CMOS technologies

F. Chen^*, M. Shinosky, B. Li, J. Gambino, S. Mongeon, P. Pokrinchak, J. Aitken, D. Badami, M. Angyal, R. Achanta, G. Bonilla, G. Yang, P. Liu, K. Li, J. Sudijono, Y. Tan, T. J. Tang, C. Child

^*Corresponding author for this work

Imaging & Characterization Core Lab

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

23 Scopus citations

Abstract

During technology development, the study of ultra low-k (ULK) TDDB is important for assuring robust reliability. As the technology advances, several critical ULK TDDB issues were faced for the first time and needed to be addressed. First, the increase of ULK leakage current noise level induced by soft breakdown during stress was observed. Second, it was found that ULK had lower field acceleration than dense low-k. Such process and material dependences of ULK TDDB kinetics were investigated, and an optimal process to improve ULK voltage acceleration was identified. Last, as the reliability margin for ULK TDDB of via-related structures is greatly reduced at advanced CMOS technologies, a systematic study of via TDDB regarding area scaling and test structure design was conducted. It was found that only a portion of the total vias possibly determines the low-k via TDDB. A new "fatal" via ratio concept is introduced to replace the as-designed area ratio for TDDB area scaling in structures with vias, and a methodology called shift and compare (S&C) is proposed to determine the "fatal" via ratio.

Original language	English (US)
Title of host publication	2009 IEEE International Reliability Physics Symposium, IRPS 2009
Pages	464-475
Number of pages	12
DOIs	https://doi.org/10.1109/IRPS.2009.5173298
State	Published - 2009
Event	2009 IEEE International Reliability Physics Symposium, IRPS 2009 - Montreal, QC, Canada Duration: Apr 26 2009 → Apr 30 2009

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
ISSN (Print)	1541-7026

Other

Other	2009 IEEE International Reliability Physics Symposium, IRPS 2009
Country/Territory	Canada
City	Montreal, QC
Period	04/26/09 → 04/30/09

Keywords

Cu interconnect
I-V conduction slope
Low-k TDDB voltage acceleration
Low-k hard breakdown
Low-k soft breakdown
Low-k via TDDB
Poole-Frenkel
Reliability
Schottky emission
Time-dependent dielectric breakdown

ASJC Scopus subject areas

General Engineering

Access to Document

10.1109/IRPS.2009.5173298

Cite this

Chen, F., Shinosky, M., Li, B., Gambino, J., Mongeon, S., Pokrinchak, P., Aitken, J., Badami, D., Angyal, M., Achanta, R., Bonilla, G., Yang, G., Liu, P., Li, K., Sudijono, J., Tan, Y., Tang, T. J., & Child, C. (2009). Critical ultra low-k TDDB reliability issues for advanced CMOS technologies. In 2009 IEEE International Reliability Physics Symposium, IRPS 2009 (pp. 464-475). Article 5173298 (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/IRPS.2009.5173298

@inproceedings{1fba3bec678d447d8865668f6c4c03d9,

title = "Critical ultra low-k TDDB reliability issues for advanced CMOS technologies",

abstract = "During technology development, the study of ultra low-k (ULK) TDDB is important for assuring robust reliability. As the technology advances, several critical ULK TDDB issues were faced for the first time and needed to be addressed. First, the increase of ULK leakage current noise level induced by soft breakdown during stress was observed. Second, it was found that ULK had lower field acceleration than dense low-k. Such process and material dependences of ULK TDDB kinetics were investigated, and an optimal process to improve ULK voltage acceleration was identified. Last, as the reliability margin for ULK TDDB of via-related structures is greatly reduced at advanced CMOS technologies, a systematic study of via TDDB regarding area scaling and test structure design was conducted. It was found that only a portion of the total vias possibly determines the low-k via TDDB. A new {"}fatal{"} via ratio concept is introduced to replace the as-designed area ratio for TDDB area scaling in structures with vias, and a methodology called shift and compare (S&C) is proposed to determine the {"}fatal{"} via ratio.",

keywords = "Cu interconnect, I-V conduction slope, Low-k TDDB voltage acceleration, Low-k hard breakdown, Low-k soft breakdown, Low-k via TDDB, Poole-Frenkel, Reliability, Schottky emission, Time-dependent dielectric breakdown",

author = "F. Chen and M. Shinosky and B. Li and J. Gambino and S. Mongeon and P. Pokrinchak and J. Aitken and D. Badami and M. Angyal and R. Achanta and G. Bonilla and G. Yang and P. Liu and K. Li and J. Sudijono and Y. Tan and Tang, {T. J.} and C. Child",

year = "2009",

doi = "10.1109/IRPS.2009.5173298",

language = "English (US)",

isbn = "0780388038",

series = "IEEE International Reliability Physics Symposium Proceedings",

pages = "464--475",

booktitle = "2009 IEEE International Reliability Physics Symposium, IRPS 2009",

note = "2009 IEEE International Reliability Physics Symposium, IRPS 2009 ; Conference date: 26-04-2009 Through 30-04-2009",

}

Chen, F, Shinosky, M, Li, B, Gambino, J, Mongeon, S, Pokrinchak, P, Aitken, J, Badami, D, Angyal, M, Achanta, R, Bonilla, G, Yang, G, Liu, P, Li, K, Sudijono, J, Tan, Y, Tang, TJ & Child, C 2009, Critical ultra low-k TDDB reliability issues for advanced CMOS technologies. in 2009 IEEE International Reliability Physics Symposium, IRPS 2009., 5173298, IEEE International Reliability Physics Symposium Proceedings, pp. 464-475, 2009 IEEE International Reliability Physics Symposium, IRPS 2009, Montreal, QC, Canada, 04/26/09. https://doi.org/10.1109/IRPS.2009.5173298

Critical ultra low-k TDDB reliability issues for advanced CMOS technologies. / Chen, F.; Shinosky, M.; Li, B. et al.
2009 IEEE International Reliability Physics Symposium, IRPS 2009. 2009. p. 464-475 5173298 (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

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AU - Chen, F.

AU - Shinosky, M.

AU - Li, B.

AU - Gambino, J.

AU - Mongeon, S.

AU - Pokrinchak, P.

AU - Aitken, J.

AU - Badami, D.

AU - Angyal, M.

AU - Achanta, R.

AU - Bonilla, G.

AU - Yang, G.

AU - Liu, P.

AU - Li, K.

AU - Sudijono, J.

AU - Tan, Y.

AU - Tang, T. J.

AU - Child, C.

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AB - During technology development, the study of ultra low-k (ULK) TDDB is important for assuring robust reliability. As the technology advances, several critical ULK TDDB issues were faced for the first time and needed to be addressed. First, the increase of ULK leakage current noise level induced by soft breakdown during stress was observed. Second, it was found that ULK had lower field acceleration than dense low-k. Such process and material dependences of ULK TDDB kinetics were investigated, and an optimal process to improve ULK voltage acceleration was identified. Last, as the reliability margin for ULK TDDB of via-related structures is greatly reduced at advanced CMOS technologies, a systematic study of via TDDB regarding area scaling and test structure design was conducted. It was found that only a portion of the total vias possibly determines the low-k via TDDB. A new "fatal" via ratio concept is introduced to replace the as-designed area ratio for TDDB area scaling in structures with vias, and a methodology called shift and compare (S&C) is proposed to determine the "fatal" via ratio.

KW - Cu interconnect

KW - I-V conduction slope

KW - Low-k TDDB voltage acceleration

KW - Low-k hard breakdown

KW - Low-k soft breakdown

KW - Low-k via TDDB

KW - Poole-Frenkel

KW - Reliability

KW - Schottky emission

KW - Time-dependent dielectric breakdown

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SN - 9780780388031

T3 - IEEE International Reliability Physics Symposium Proceedings

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BT - 2009 IEEE International Reliability Physics Symposium, IRPS 2009

T2 - 2009 IEEE International Reliability Physics Symposium, IRPS 2009

Y2 - 26 April 2009 through 30 April 2009

ER -

Critical ultra low-k TDDB reliability issues for advanced CMOS technologies

Abstract

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Keywords

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