We calculate the critical thickness for misfit dislocation (MD) formation in lattice mismatched semipolar and nonpolar III-nitride wurtzite semiconductor layers for the case of MDs originated from prismatic slip (PSMDs). It has been shown that there is a switch of stress relaxation modes from generation of basal slip originated MDs to PSMDs after the angle between c-axis in wurtzite crystal structure and the direction of semipolar growth reaches a particular value, e.g., ∼70° for Al0.13Ga0.87N/GaN (h0h̄ 1) semipolar heterostructures. This means that for some semipolar growth orientations of III-nitride heterostructures biaxial relaxation of misfit stress can be realized. The results of modeling are compared to experimental data on the onset of plastic relaxation in AlxGa1−xN/GaN heterostructures.
|Original language||English (US)|
|State||Published - Jan 20 2016|
Bibliographical noteKAUST Repository Item: Exported on 2020-10-01
Acknowledgements: A.M.S., V.E.B., and A.E.R. received support for conducting theoretical analysis of dislocation behavior in wide band gap semiconductors from Russian Science Foundation Project No. 14-29-00086. The UCSB work was supported in part by the KACST-KAUST-UCSB Solid State Lighting Program.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.