Critical thickness for the formation of misfit dislocations originating from prismatic slip in semipolar and nonpolar III-nitride heterostructures

A. M. Smirnov; E. C. Young; V. E. Bougrov; J. S. Speck; A. E. Romanov

doi:10.1063/1.4939907

Critical thickness for the formation of misfit dislocations originating from prismatic slip in semipolar and nonpolar III-nitride heterostructures

A. M. Smirnov, E. C. Young, V. E. Bougrov, J. S. Speck, A. E. Romanov

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16 Scopus citations

Abstract

We calculate the critical thickness for misfit dislocation (MD) formation in lattice mismatched semipolar and nonpolar III-nitride wurtzite semiconductor layers for the case of MDs originated from prismatic slip (PSMDs). It has been shown that there is a switch of stress relaxation modes from generation of basal slip originated MDs to PSMDs after the angle between c-axis in wurtzite crystal structure and the direction of semipolar growth reaches a particular value, e.g., ∼70° for Al0.13Ga0.87N/GaN (h0h̄ 1) semipolar heterostructures. This means that for some semipolar growth orientations of III-nitride heterostructures biaxial relaxation of misfit stress can be realized. The results of modeling are compared to experimental data on the onset of plastic relaxation in AlxGa1−xN/GaN heterostructures.

Original language	English (US)
Pages (from-to)	016105
Journal	APL Materials
Volume	4
Issue number	1
DOIs	https://doi.org/10.1063/1.4939907
State	Published - Jan 20 2016
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: A.M.S., V.E.B., and A.E.R. received support for conducting theoretical analysis of dislocation behavior in wide band gap semiconductors from Russian Science Foundation Project No. 14-29-00086. The UCSB work was supported in part by the KACST-KAUST-UCSB Solid State Lighting Program.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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title = "Critical thickness for the formation of misfit dislocations originating from prismatic slip in semipolar and nonpolar III-nitride heterostructures",

abstract = "We calculate the critical thickness for misfit dislocation (MD) formation in lattice mismatched semipolar and nonpolar III-nitride wurtzite semiconductor layers for the case of MDs originated from prismatic slip (PSMDs). It has been shown that there is a switch of stress relaxation modes from generation of basal slip originated MDs to PSMDs after the angle between c-axis in wurtzite crystal structure and the direction of semipolar growth reaches a particular value, e.g., ∼70° for Al0.13Ga0.87N/GaN (h0{\=h} 1) semipolar heterostructures. This means that for some semipolar growth orientations of III-nitride heterostructures biaxial relaxation of misfit stress can be realized. The results of modeling are compared to experimental data on the onset of plastic relaxation in AlxGa1−xN/GaN heterostructures.",

author = "Smirnov, {A. M.} and Young, {E. C.} and Bougrov, {V. E.} and Speck, {J. S.} and Romanov, {A. E.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: A.M.S., V.E.B., and A.E.R. received support for conducting theoretical analysis of dislocation behavior in wide band gap semiconductors from Russian Science Foundation Project No. 14-29-00086. The UCSB work was supported in part by the KACST-KAUST-UCSB Solid State Lighting Program. This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

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doi = "10.1063/1.4939907",

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T1 - Critical thickness for the formation of misfit dislocations originating from prismatic slip in semipolar and nonpolar III-nitride heterostructures

AU - Smirnov, A. M.

AU - Young, E. C.

AU - Bougrov, V. E.

AU - Speck, J. S.

AU - Romanov, A. E.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: A.M.S., V.E.B., and A.E.R. received support for conducting theoretical analysis of dislocation behavior in wide band gap semiconductors from Russian Science Foundation Project No. 14-29-00086. The UCSB work was supported in part by the KACST-KAUST-UCSB Solid State Lighting Program. This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2016/1/20

Y1 - 2016/1/20

N2 - We calculate the critical thickness for misfit dislocation (MD) formation in lattice mismatched semipolar and nonpolar III-nitride wurtzite semiconductor layers for the case of MDs originated from prismatic slip (PSMDs). It has been shown that there is a switch of stress relaxation modes from generation of basal slip originated MDs to PSMDs after the angle between c-axis in wurtzite crystal structure and the direction of semipolar growth reaches a particular value, e.g., ∼70° for Al0.13Ga0.87N/GaN (h0h̄ 1) semipolar heterostructures. This means that for some semipolar growth orientations of III-nitride heterostructures biaxial relaxation of misfit stress can be realized. The results of modeling are compared to experimental data on the onset of plastic relaxation in AlxGa1−xN/GaN heterostructures.

AB - We calculate the critical thickness for misfit dislocation (MD) formation in lattice mismatched semipolar and nonpolar III-nitride wurtzite semiconductor layers for the case of MDs originated from prismatic slip (PSMDs). It has been shown that there is a switch of stress relaxation modes from generation of basal slip originated MDs to PSMDs after the angle between c-axis in wurtzite crystal structure and the direction of semipolar growth reaches a particular value, e.g., ∼70° for Al0.13Ga0.87N/GaN (h0h̄ 1) semipolar heterostructures. This means that for some semipolar growth orientations of III-nitride heterostructures biaxial relaxation of misfit stress can be realized. The results of modeling are compared to experimental data on the onset of plastic relaxation in AlxGa1−xN/GaN heterostructures.

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DO - 10.1063/1.4939907

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JO - APL Materials

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Critical thickness for the formation of misfit dislocations originating from prismatic slip in semipolar and nonpolar III-nitride heterostructures

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