Critical Temperature for the Conversion from Wurtzite to Zincblende of the Optical Emission of InAs Nanowires

Michele B. Rota; Amira S. Ameruddin; Jennifer Wong-Leung; Abderrezak Belabbes; Qiang Gao; Antonio Miriametro; Francesco Mura; Hark Hoe Tan; Antonio Polimeni; Friedhelm Bechstedt; Chennupati Jagadish; Mario Capizzi

doi:10.1021/acs.jpcc.7b05482

Critical Temperature for the Conversion from Wurtzite to Zincblende of the Optical Emission of InAs Nanowires

Michele B. Rota, Amira S. Ameruddin, Jennifer Wong-Leung, Abderrezak Belabbes, Qiang Gao, Antonio Miriametro, Francesco Mura, Hark Hoe Tan, Antonio Polimeni, Friedhelm Bechstedt, Chennupati Jagadish, Mario Capizzi

Physical Sciences and Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

One hour annealing at 300 degrees C changes the optical emission characteristics of InAs nanowires (NWs) from the wurtzite (WZ) phase into that of zincblende (ZB). These results are accounted for by the conversion of a small fraction of the NW WZ metastable structure into the stable ZB structure. Several paths toward the polytype transformation in the configuration space are also demonstrated using first-principles calculations. For lower annealing temperatures, emission which is likely related to WZ polytypes is observed at energies that agree with theoretical predictions. These results demonstrate severe constraints on thermal processes to which devices made from InAs WZ NWs can be exposed.

Original language	English (US)
Pages (from-to)	16650-16656
Number of pages	7
Journal	The Journal of Physical Chemistry C
Volume	121
Issue number	30
DOIs	https://doi.org/10.1021/acs.jpcc.7b05482
State	Published - Jul 21 2017

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: A.P. acknowledges funding by Sapienza University di Roma under "Ateneo Awards 2015" Grant. The Australian authors acknowledge the Australian Research Council for financial support and Australian National Fabrication Facility and Australian Microscopy and Microanalysis Research Facility for providing access to some of the equipment used in this work. Dr. Aruni Fonseka is acknowledged for fruitful discussion.

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10.1021/acs.jpcc.7b05482

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Rota, M. B., Ameruddin, A. S., Wong-Leung, J., Belabbes, A., Gao, Q., Miriametro, A., Mura, F., Tan, H. H., Polimeni, A., Bechstedt, F., Jagadish, C., & Capizzi, M. (2017). Critical Temperature for the Conversion from Wurtzite to Zincblende of the Optical Emission of InAs Nanowires. The Journal of Physical Chemistry C, 121(30), 16650-16656. https://doi.org/10.1021/acs.jpcc.7b05482

@article{e5b765b2c74740fbbdad01b99f700a7a,

title = "Critical Temperature for the Conversion from Wurtzite to Zincblende of the Optical Emission of InAs Nanowires",

abstract = "One hour annealing at 300 degrees C changes the optical emission characteristics of InAs nanowires (NWs) from the wurtzite (WZ) phase into that of zincblende (ZB). These results are accounted for by the conversion of a small fraction of the NW WZ metastable structure into the stable ZB structure. Several paths toward the polytype transformation in the configuration space are also demonstrated using first-principles calculations. For lower annealing temperatures, emission which is likely related to WZ polytypes is observed at energies that agree with theoretical predictions. These results demonstrate severe constraints on thermal processes to which devices made from InAs WZ NWs can be exposed.",

author = "Rota, {Michele B.} and Ameruddin, {Amira S.} and Jennifer Wong-Leung and Abderrezak Belabbes and Qiang Gao and Antonio Miriametro and Francesco Mura and Tan, {Hark Hoe} and Antonio Polimeni and Friedhelm Bechstedt and Chennupati Jagadish and Mario Capizzi",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: A.P. acknowledges funding by Sapienza University di Roma under {"}Ateneo Awards 2015{"} Grant. The Australian authors acknowledge the Australian Research Council for financial support and Australian National Fabrication Facility and Australian Microscopy and Microanalysis Research Facility for providing access to some of the equipment used in this work. Dr. Aruni Fonseka is acknowledged for fruitful discussion.",

year = "2017",

month = jul,

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doi = "10.1021/acs.jpcc.7b05482",

language = "English (US)",

volume = "121",

pages = "16650--16656",

journal = "The Journal of Physical Chemistry C",

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publisher = "American Chemical Society",

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Rota, MB, Ameruddin, AS, Wong-Leung, J, Belabbes, A, Gao, Q, Miriametro, A, Mura, F, Tan, HH, Polimeni, A, Bechstedt, F, Jagadish, C & Capizzi, M 2017, 'Critical Temperature for the Conversion from Wurtzite to Zincblende of the Optical Emission of InAs Nanowires', The Journal of Physical Chemistry C, vol. 121, no. 30, pp. 16650-16656. https://doi.org/10.1021/acs.jpcc.7b05482

TY - JOUR

T1 - Critical Temperature for the Conversion from Wurtzite to Zincblende of the Optical Emission of InAs Nanowires

AU - Rota, Michele B.

AU - Ameruddin, Amira S.

AU - Wong-Leung, Jennifer

AU - Belabbes, Abderrezak

AU - Gao, Qiang

AU - Miriametro, Antonio

AU - Mura, Francesco

AU - Tan, Hark Hoe

AU - Polimeni, Antonio

AU - Bechstedt, Friedhelm

AU - Jagadish, Chennupati

AU - Capizzi, Mario

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: A.P. acknowledges funding by Sapienza University di Roma under "Ateneo Awards 2015" Grant. The Australian authors acknowledge the Australian Research Council for financial support and Australian National Fabrication Facility and Australian Microscopy and Microanalysis Research Facility for providing access to some of the equipment used in this work. Dr. Aruni Fonseka is acknowledged for fruitful discussion.

PY - 2017/7/21

Y1 - 2017/7/21

N2 - One hour annealing at 300 degrees C changes the optical emission characteristics of InAs nanowires (NWs) from the wurtzite (WZ) phase into that of zincblende (ZB). These results are accounted for by the conversion of a small fraction of the NW WZ metastable structure into the stable ZB structure. Several paths toward the polytype transformation in the configuration space are also demonstrated using first-principles calculations. For lower annealing temperatures, emission which is likely related to WZ polytypes is observed at energies that agree with theoretical predictions. These results demonstrate severe constraints on thermal processes to which devices made from InAs WZ NWs can be exposed.

AB - One hour annealing at 300 degrees C changes the optical emission characteristics of InAs nanowires (NWs) from the wurtzite (WZ) phase into that of zincblende (ZB). These results are accounted for by the conversion of a small fraction of the NW WZ metastable structure into the stable ZB structure. Several paths toward the polytype transformation in the configuration space are also demonstrated using first-principles calculations. For lower annealing temperatures, emission which is likely related to WZ polytypes is observed at energies that agree with theoretical predictions. These results demonstrate severe constraints on thermal processes to which devices made from InAs WZ NWs can be exposed.

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VL - 121

SP - 16650

EP - 16656

JO - The Journal of Physical Chemistry C

JF - The Journal of Physical Chemistry C

IS - 30

ER -

Critical Temperature for the Conversion from Wurtzite to Zincblende of the Optical Emission of InAs Nanowires

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