Critical Temperature for the Conversion from Wurtzite to Zincblende of the Optical Emission of InAs Nanowires

Michele B. Rota; Amira S. Ameruddin; Jennifer Wong-Leung; Abderrezak Belabbes; Qiang Gao; Antonio Miriametro; Francesco Mura; Hark Hoe Tan; Antonio Polimeni; Friedhelm Bechstedt; Chennupati Jagadish; Mario Capizzi

doi:10.1021/acs.jpcc.7b05482

Critical Temperature for the Conversion from Wurtzite to Zincblende of the Optical Emission of InAs Nanowires

Michele B. Rota, Amira S. Ameruddin, Jennifer Wong-Leung, Abderrezak Belabbes, Qiang Gao, Antonio Miriametro, Francesco Mura, Hark Hoe Tan, Antonio Polimeni, Friedhelm Bechstedt, Chennupati Jagadish, Mario Capizzi^*

^*Corresponding author for this work

Physical Sciences and Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

One hour annealing at 300 °C changes the optical emission characteristics of InAs nanowires (NWs) from the wurtzite (WZ) phase into that of zincblende (ZB). These results are accounted for by the conversion of a small fraction of the NW WZ metastable structure into the stable ZB structure. Several paths toward the polytype transformation in the configuration space are also demonstrated using first-principles calculations. For lower annealing temperatures, emission which is likely related to WZ polytypes is observed at energies that agree with theoretical predictions. These results demonstrate severe constraints on thermal processes to which devices made from InAs WZ NWs can be exposed.

Original language	English (US)
Pages (from-to)	16650-16656
Number of pages	7
Journal	JOURNAL OF PHYSICAL CHEMISTRY C
Volume	121
Issue number	30
DOIs	https://doi.org/10.1021/acs.jpcc.7b05482
State	Published - Aug 3 2017

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Publisher Copyright:
© 2017 American Chemical Society.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
General Energy
Surfaces, Coatings and Films
Physical and Theoretical Chemistry

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Rota, M. B., Ameruddin, A. S., Wong-Leung, J., Belabbes, A., Gao, Q., Miriametro, A., Mura, F., Tan, H. H., Polimeni, A., Bechstedt, F., Jagadish, C., & Capizzi, M. (2017). Critical Temperature for the Conversion from Wurtzite to Zincblende of the Optical Emission of InAs Nanowires. JOURNAL OF PHYSICAL CHEMISTRY C, 121(30), 16650-16656. https://doi.org/10.1021/acs.jpcc.7b05482

@article{e5b765b2c74740fbbdad01b99f700a7a,

title = "Critical Temperature for the Conversion from Wurtzite to Zincblende of the Optical Emission of InAs Nanowires",

abstract = "One hour annealing at 300 °C changes the optical emission characteristics of InAs nanowires (NWs) from the wurtzite (WZ) phase into that of zincblende (ZB). These results are accounted for by the conversion of a small fraction of the NW WZ metastable structure into the stable ZB structure. Several paths toward the polytype transformation in the configuration space are also demonstrated using first-principles calculations. For lower annealing temperatures, emission which is likely related to WZ polytypes is observed at energies that agree with theoretical predictions. These results demonstrate severe constraints on thermal processes to which devices made from InAs WZ NWs can be exposed.",

author = "Rota, {Michele B.} and Ameruddin, {Amira S.} and Jennifer Wong-Leung and Abderrezak Belabbes and Qiang Gao and Antonio Miriametro and Francesco Mura and Tan, {Hark Hoe} and Antonio Polimeni and Friedhelm Bechstedt and Chennupati Jagadish and Mario Capizzi",

note = "Publisher Copyright: {\textcopyright} 2017 American Chemical Society.",

year = "2017",

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doi = "10.1021/acs.jpcc.7b05482",

language = "English (US)",

volume = "121",

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Rota, MB, Ameruddin, AS, Wong-Leung, J, Belabbes, A, Gao, Q, Miriametro, A, Mura, F, Tan, HH, Polimeni, A, Bechstedt, F, Jagadish, C & Capizzi, M 2017, 'Critical Temperature for the Conversion from Wurtzite to Zincblende of the Optical Emission of InAs Nanowires', JOURNAL OF PHYSICAL CHEMISTRY C, vol. 121, no. 30, pp. 16650-16656. https://doi.org/10.1021/acs.jpcc.7b05482

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T1 - Critical Temperature for the Conversion from Wurtzite to Zincblende of the Optical Emission of InAs Nanowires

AU - Rota, Michele B.

AU - Ameruddin, Amira S.

AU - Wong-Leung, Jennifer

AU - Belabbes, Abderrezak

AU - Gao, Qiang

AU - Miriametro, Antonio

AU - Mura, Francesco

AU - Tan, Hark Hoe

AU - Polimeni, Antonio

AU - Bechstedt, Friedhelm

AU - Jagadish, Chennupati

AU - Capizzi, Mario

PY - 2017/8/3

Y1 - 2017/8/3

N2 - One hour annealing at 300 °C changes the optical emission characteristics of InAs nanowires (NWs) from the wurtzite (WZ) phase into that of zincblende (ZB). These results are accounted for by the conversion of a small fraction of the NW WZ metastable structure into the stable ZB structure. Several paths toward the polytype transformation in the configuration space are also demonstrated using first-principles calculations. For lower annealing temperatures, emission which is likely related to WZ polytypes is observed at energies that agree with theoretical predictions. These results demonstrate severe constraints on thermal processes to which devices made from InAs WZ NWs can be exposed.

AB - One hour annealing at 300 °C changes the optical emission characteristics of InAs nanowires (NWs) from the wurtzite (WZ) phase into that of zincblende (ZB). These results are accounted for by the conversion of a small fraction of the NW WZ metastable structure into the stable ZB structure. Several paths toward the polytype transformation in the configuration space are also demonstrated using first-principles calculations. For lower annealing temperatures, emission which is likely related to WZ polytypes is observed at energies that agree with theoretical predictions. These results demonstrate severe constraints on thermal processes to which devices made from InAs WZ NWs can be exposed.

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JF - JOURNAL OF PHYSICAL CHEMISTRY C

IS - 30

ER -

Critical Temperature for the Conversion from Wurtzite to Zincblende of the Optical Emission of InAs Nanowires

Abstract

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