Corrigendum to “Superior photoelectrocatalytic performance of ternary structural BiVO₄/GQD/g-C₃N₄ heterojunction” [J. Col. Interf. Sci. 586 (2021) 785–796] (Journal of Colloid And Interface Science (2021) 586 (785–796), (S0021979720315010), (10.1016/j.jcis.2020.11.003))

The authors deeply regret to inform that the the methodology section (Section 2.1) contains an error, specifically on the amount used for loading the RGO and GQD in preparing the ternary BiVO₄/GQD/g-C₃N₄ heterojunction. In the published work, the loading amount stated was 0.8 wt% for both GQD and RGO. However, the correct amount used for the RGO and GQD loadings in preparing the ternary samples supposedly was 1.2 wt%. The 0.8 wt% loadings is referred to the loading amount of g-C₃N₄ in the ternary BiVO₄/GQD/g-C₃N₄ heterojunction and not the RGO and GQD loading. Thus, the corrected loadings amount of RGO and GQD is mentioned below. This correction does not change the results and discussion of the original article. The authors would like to apologize for any inconvenience caused. The same synthesis protocols were applied in preparing the ternary BiVO₄/RGO/g-C₃N₄ and BiVO₄/GQD/g-C₃N₄ samples in which each of the ternary structure contains 1.2 wt% of the graphene-based materials.