Correlative Atomic Coordination and Interfacial Charge Polarity in Al2O3/GaN and Al2O3/Si Heterostructures

Chuanju Wang, Xiaohang Li*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Al2O3 is used to form Al2O3/GaN and Al2O3/Si heterostructures for many electronic and optoelectronic devices. Yet the origins of the positive interfacial charges in the Al2O3/GaN heterostructure and negative interfacial charges in the Al2O3/Si heterostructure are often elusive. Herein, in-depth studies of the Al2O3/GaN and Al2O3/Si heterostructures are conducted, especially on how the atomic coordination structure affects the interfacial charges. It is discovered that the octahedral [AlO6]9− coordination surpassed tetrahedral [AlO4]5− coordination at the Al2O3/GaN interface, whereas tetrahedral [AlO4]5− coordination dominated at the Al2O3/Si interface. Therefore, the interfacial charge polarity is correlated with the nonstoichiometry atomic coordination of Al2O3 at the two interfaces. This study reveals the atomic origin of charge polarity at high-k/semiconductor interfaces and could facilitate the development of high-performance optoelectronic and electronic devices through engineering the atomic coordination structure of the high-k materials.

Original languageEnglish (US)
Article number2200413
JournalPhysica Status Solidi - Rapid Research Letters
Volume17
Issue number3
DOIs
StatePublished - Mar 2023

Bibliographical note

Publisher Copyright:
© 2022 Wiley-VCH GmbH.

Keywords

  • atomic coordination
  • interfaces
  • negative charges
  • positive charges

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics

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