Correlation of Mn charge state with the electrical resistivity of Mn doped indium tin oxide thin films

S. R. Sarath Kumar; Mohamed N. Hedhili; Husam N. Alshareef; S. Kasiviswanathan

doi:10.1063/1.3481800

Correlation of Mn charge state with the electrical resistivity of Mn doped indium tin oxide thin films

S. R. Sarath Kumar, Mohamed N. Hedhili, Husam N. Alshareef, S. Kasiviswanathan

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Abstract

Correlation of charge state of Mn with the increase in resistivity with Mn concentration is demonstrated in Mn-doped indium tin oxide films. Bonding analysis shows that Mn 2p3/2 core level can be deconvoluted into three components corresponding to Mn2+ and Mn4+ with binding energies 640.8 eV and 642.7 eV, respectively, and a Mn2+ satellite at ∼5.4 eV away from the Mn2+ peak. The presence of the satellite peak unambiguously proves that Mn exists in the +2 charge state. The ratio of concentration of Mn2+ to Mn4+ of ∼4:1 suggests that charge compensation occurs in the n-type films causing the resistivity increase.

Original language	English (US)
Pages (from-to)	111909
Journal	Applied Physics Letters
Volume	97
Issue number	11
DOIs	https://doi.org/10.1063/1.3481800
State	Published - Sep 15 2010

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KAUST Repository Item: Exported on 2020-10-01

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3481800

https://repository.kaust.edu.sa/bitstream/10754/552764/1/1.3481800.pdf

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title = "Correlation of Mn charge state with the electrical resistivity of Mn doped indium tin oxide thin films",

abstract = "Correlation of charge state of Mn with the increase in resistivity with Mn concentration is demonstrated in Mn-doped indium tin oxide films. Bonding analysis shows that Mn 2p3/2 core level can be deconvoluted into three components corresponding to Mn2+ and Mn4+ with binding energies 640.8 eV and 642.7 eV, respectively, and a Mn2+ satellite at ∼5.4 eV away from the Mn2+ peak. The presence of the satellite peak unambiguously proves that Mn exists in the +2 charge state. The ratio of concentration of Mn2+ to Mn4+ of ∼4:1 suggests that charge compensation occurs in the n-type films causing the resistivity increase.",

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T1 - Correlation of Mn charge state with the electrical resistivity of Mn doped indium tin oxide thin films

AU - Sarath Kumar, S. R.

AU - Hedhili, Mohamed N.

AU - Alshareef, Husam N.

AU - Kasiviswanathan, S.

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2010/9/15

Y1 - 2010/9/15

N2 - Correlation of charge state of Mn with the increase in resistivity with Mn concentration is demonstrated in Mn-doped indium tin oxide films. Bonding analysis shows that Mn 2p3/2 core level can be deconvoluted into three components corresponding to Mn2+ and Mn4+ with binding energies 640.8 eV and 642.7 eV, respectively, and a Mn2+ satellite at ∼5.4 eV away from the Mn2+ peak. The presence of the satellite peak unambiguously proves that Mn exists in the +2 charge state. The ratio of concentration of Mn2+ to Mn4+ of ∼4:1 suggests that charge compensation occurs in the n-type films causing the resistivity increase.

AB - Correlation of charge state of Mn with the increase in resistivity with Mn concentration is demonstrated in Mn-doped indium tin oxide films. Bonding analysis shows that Mn 2p3/2 core level can be deconvoluted into three components corresponding to Mn2+ and Mn4+ with binding energies 640.8 eV and 642.7 eV, respectively, and a Mn2+ satellite at ∼5.4 eV away from the Mn2+ peak. The presence of the satellite peak unambiguously proves that Mn exists in the +2 charge state. The ratio of concentration of Mn2+ to Mn4+ of ∼4:1 suggests that charge compensation occurs in the n-type films causing the resistivity increase.

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JO - Applied Physics Letters

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Correlation of Mn charge state with the electrical resistivity of Mn doped indium tin oxide thin films

Abstract

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