TY - JOUR
T1 - Core Fluorination Enhances Solubility and Ambient Stability of an IDT-Based n-Type Semiconductor in Transistor Devices
AU - Hodsden, Thomas
AU - Thorley, Karl J.
AU - Panidi, Julianna
AU - Basu, Aniruddha
AU - Marsh, Adam V.
AU - Dai, Haojie
AU - White, Andrew J. P.
AU - Wang, Changsheng
AU - Mitchell, William
AU - Glöcklhofer, Florian
AU - Anthopoulos, Thomas D.
AU - Heeney, Martin
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The authors thank the Engineering and Physical Sciences Research Council (EPSRC) (Grant EP/L016702/1) and the Royal Society and the Wolfson Foundation (for Royal Society Wolfson Fellowship) for support. A.B. and T.D.A. are grateful to KAUST for the financial support.
PY - 2020/2/26
Y1 - 2020/2/26
N2 - The synthesis of a novel fluorinated n-type small molecule based on an inda-cenodithiophene core is reported. Fluorination is found to have a significant impact on the physical properties, including a surprisingly dramatic improve-ment in solubility, in addition to effectively stabilizing the lowest-unoccupied molecular orbital energy (−4.24 eV). Single-crystal analysis and density func-tional theory calculations indicate the improved solubility can be attributed to backbone torsion resulting from the positioning of the fluorine group in close proximity to the strongly electron-withdrawing dicyanomethylene group. Organic thin-film transistors made via blade coating display high electron mobility (up to 0.49 cm2 V−1 s−1) along with good retention of performance in ambient conditions.
AB - The synthesis of a novel fluorinated n-type small molecule based on an inda-cenodithiophene core is reported. Fluorination is found to have a significant impact on the physical properties, including a surprisingly dramatic improve-ment in solubility, in addition to effectively stabilizing the lowest-unoccupied molecular orbital energy (−4.24 eV). Single-crystal analysis and density func-tional theory calculations indicate the improved solubility can be attributed to backbone torsion resulting from the positioning of the fluorine group in close proximity to the strongly electron-withdrawing dicyanomethylene group. Organic thin-film transistors made via blade coating display high electron mobility (up to 0.49 cm2 V−1 s−1) along with good retention of performance in ambient conditions.
UR - http://hdl.handle.net/10754/661848
UR - https://onlinelibrary.wiley.com/doi/abs/10.1002/adfm.202000325
UR - http://www.scopus.com/inward/record.url?scp=85080037653&partnerID=8YFLogxK
U2 - 10.1002/adfm.202000325
DO - 10.1002/adfm.202000325
M3 - Article
SN - 1616-301X
SP - 2000325
JO - Advanced Functional Materials
JF - Advanced Functional Materials
ER -