Copper vanadate (CVO) nanowires were grown on Si/SiO2 substrates by thermal annealing technique. A thin film of a CVO precursor at 550 C under an ambient atmosphere could also be prepared. The electrical properties of the nanowires embedded in the dielectrical layer were examined by capacitance-voltage (C-V) measurements. The C-V curves for Au/CVO nanowires embedded in an hafnium oxide layer/SiO2/p-Si capacitor at 298 K showed a clockwise hysteresis loop when the gate bias was swept cyclically. The hysteresis characteristics were studied further at different frequencies, which clearly indicated that the traps in the nanowires have a large charging-discharging time and thus the as-synthesized nanowires can be utilized for electrical charge storage devices. © 2013 Springer Science+Business Media Dordrecht.
|Original language||English (US)|
|Journal||Journal of Nanoparticle Research|
|State||Published - Jul 14 2013|
Bibliographical noteKAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This project was supported by King Saud University, Deanship of Scientific Research, College of Science Research Center. One of the authors (M. F. Warsi) is highly thankful to the Islamia University Bahawalpur (Pakistan) and Higher Education Commission (HEC) of Pakistan.
ASJC Scopus subject areas
- Modeling and Simulation
- Materials Science(all)
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics