Copper vanadate nanowires-based MIS capacitors: Synthesis, characterization, and their electrical charge storage applications

Muhammad Shahid; Ayman Nafady; Imran Shakir; Usman Ali Rana; Mansoor M. Sarfraz; Muhammad Farooq Warsi; Rafaqat Hussain; Muhammad Naeem Ashiq

doi:10.1007/s11051-013-1826-8

Copper vanadate nanowires-based MIS capacitors: Synthesis, characterization, and their electrical charge storage applications

Muhammad Shahid, Ayman Nafady, Imran Shakir, Usman Ali Rana, Mansoor M. Sarfraz, Muhammad Farooq Warsi, Rafaqat Hussain, Muhammad Naeem Ashiq

King Abdullah University of Science and Technology

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Copper vanadate (CVO) nanowires were grown on Si/SiO2 substrates by thermal annealing technique. A thin film of a CVO precursor at 550 C under an ambient atmosphere could also be prepared. The electrical properties of the nanowires embedded in the dielectrical layer were examined by capacitance-voltage (C-V) measurements. The C-V curves for Au/CVO nanowires embedded in an hafnium oxide layer/SiO2/p-Si capacitor at 298 K showed a clockwise hysteresis loop when the gate bias was swept cyclically. The hysteresis characteristics were studied further at different frequencies, which clearly indicated that the traps in the nanowires have a large charging-discharging time and thus the as-synthesized nanowires can be utilized for electrical charge storage devices. © 2013 Springer Science+Business Media Dordrecht.

Original language	English (US)
Journal	Journal of Nanoparticle Research
Volume	15
Issue number	8
DOIs	https://doi.org/10.1007/s11051-013-1826-8
State	Published - Jul 14 2013

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This project was supported by King Saud University, Deanship of Scientific Research, College of Science Research Center. One of the authors (M. F. Warsi) is highly thankful to the Islamia University Bahawalpur (Pakistan) and Higher Education Commission (HEC) of Pakistan.

ASJC Scopus subject areas

Bioengineering
Modeling and Simulation
General Materials Science
Atomic and Molecular Physics, and Optics
General Chemistry
Condensed Matter Physics

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title = "Copper vanadate nanowires-based MIS capacitors: Synthesis, characterization, and their electrical charge storage applications",

abstract = "Copper vanadate (CVO) nanowires were grown on Si/SiO2 substrates by thermal annealing technique. A thin film of a CVO precursor at 550 C under an ambient atmosphere could also be prepared. The electrical properties of the nanowires embedded in the dielectrical layer were examined by capacitance-voltage (C-V) measurements. The C-V curves for Au/CVO nanowires embedded in an hafnium oxide layer/SiO2/p-Si capacitor at 298 K showed a clockwise hysteresis loop when the gate bias was swept cyclically. The hysteresis characteristics were studied further at different frequencies, which clearly indicated that the traps in the nanowires have a large charging-discharging time and thus the as-synthesized nanowires can be utilized for electrical charge storage devices. {\textcopyright} 2013 Springer Science+Business Media Dordrecht.",

author = "Muhammad Shahid and Ayman Nafady and Imran Shakir and Rana, {Usman Ali} and Sarfraz, {Mansoor M.} and Warsi, {Muhammad Farooq} and Rafaqat Hussain and Ashiq, {Muhammad Naeem}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This project was supported by King Saud University, Deanship of Scientific Research, College of Science Research Center. One of the authors (M. F. Warsi) is highly thankful to the Islamia University Bahawalpur (Pakistan) and Higher Education Commission (HEC) of Pakistan.",

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AU - Shahid, Muhammad

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AU - Sarfraz, Mansoor M.

AU - Warsi, Muhammad Farooq

AU - Hussain, Rafaqat

AU - Ashiq, Muhammad Naeem

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This project was supported by King Saud University, Deanship of Scientific Research, College of Science Research Center. One of the authors (M. F. Warsi) is highly thankful to the Islamia University Bahawalpur (Pakistan) and Higher Education Commission (HEC) of Pakistan.

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N2 - Copper vanadate (CVO) nanowires were grown on Si/SiO2 substrates by thermal annealing technique. A thin film of a CVO precursor at 550 C under an ambient atmosphere could also be prepared. The electrical properties of the nanowires embedded in the dielectrical layer were examined by capacitance-voltage (C-V) measurements. The C-V curves for Au/CVO nanowires embedded in an hafnium oxide layer/SiO2/p-Si capacitor at 298 K showed a clockwise hysteresis loop when the gate bias was swept cyclically. The hysteresis characteristics were studied further at different frequencies, which clearly indicated that the traps in the nanowires have a large charging-discharging time and thus the as-synthesized nanowires can be utilized for electrical charge storage devices. © 2013 Springer Science+Business Media Dordrecht.

AB - Copper vanadate (CVO) nanowires were grown on Si/SiO2 substrates by thermal annealing technique. A thin film of a CVO precursor at 550 C under an ambient atmosphere could also be prepared. The electrical properties of the nanowires embedded in the dielectrical layer were examined by capacitance-voltage (C-V) measurements. The C-V curves for Au/CVO nanowires embedded in an hafnium oxide layer/SiO2/p-Si capacitor at 298 K showed a clockwise hysteresis loop when the gate bias was swept cyclically. The hysteresis characteristics were studied further at different frequencies, which clearly indicated that the traps in the nanowires have a large charging-discharging time and thus the as-synthesized nanowires can be utilized for electrical charge storage devices. © 2013 Springer Science+Business Media Dordrecht.

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ER -

Copper vanadate nanowires-based MIS capacitors: Synthesis, characterization, and their electrical charge storage applications

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