We demonstrated the solution-processed CuIn(S,Se)2 solar cells using a diamine/dithiol cosolvent. Compared to the traditional CIGS materials made with the Selenization process, we fabricated CISSe films without the Selenization process. The crystallinity, optical properties, and morphology of the CIGSSe films were changed by annealing temperature and film thickness. The band gap energy were found approximately 1.5 eV with the different film thickness.
|Original language||English (US)|
|Number of pages||14|
|Journal||Molecular Crystals and Liquid Crystals|
|State||Published - Dec 18 2020|
Bibliographical noteKAUST Repository Item: Exported on 2020-12-25
Acknowledgements: This work was supported by the Soonchunhyang University Research Fund (No.20170810). This work was supported by the Korea Institute of Energy Technology Evaluation and Planning (KETEP) and the Ministry of Trade, Industry & Energy (MOTIE) of the Republic of Korea under Grant No. 20184030202130.