Controlling the morphology of solution-processed CuIn(SSe)2 absorber layers by film thickness and annealing temperature

Quyen Do; Nguyen The Manh; Luong Nguyen Dai Triet; Yura Choi; Young Woo Lee; Yonghyun Cho; Kwangjae Lee; Namchul Cho

doi:10.1080/15421406.2020.1743464

Controlling the morphology of solution-processed CuIn(SSe)2 absorber layers by film thickness and annealing temperature

Quyen Do, Nguyen The Manh, Luong Nguyen Dai Triet, Yura Choi, Young Woo Lee, Yonghyun Cho, Kwangjae Lee, Namchul Cho

Physical Sciences and Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We demonstrated the solution-processed CuIn(S,Se)2 solar cells using a diamine/dithiol cosolvent. Compared to the traditional CIGS materials made with the Selenization process, we fabricated CISSe films without the Selenization process. The crystallinity, optical properties, and morphology of the CIGSSe films were changed by annealing temperature and film thickness. The band gap energy were found approximately 1.5 eV with the different film thickness.

Original language	English (US)
Pages (from-to)	126-139
Number of pages	14
Journal	Molecular Crystals and Liquid Crystals
Volume	707
Issue number	1
DOIs	https://doi.org/10.1080/15421406.2020.1743464
State	Published - Dec 18 2020

Bibliographical note

KAUST Repository Item: Exported on 2020-12-25
Acknowledgements: This work was supported by the Soonchunhyang University Research Fund (No.20170810). This work was supported by the Korea Institute of Energy Technology Evaluation and Planning (KETEP) and the Ministry of Trade, Industry & Energy (MOTIE) of the Republic of Korea under Grant No. 20184030202130.

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10.1080/15421406.2020.1743464

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title = "Controlling the morphology of solution-processed CuIn(SSe)2 absorber layers by film thickness and annealing temperature",

abstract = "We demonstrated the solution-processed CuIn(S,Se)2 solar cells using a diamine/dithiol cosolvent. Compared to the traditional CIGS materials made with the Selenization process, we fabricated CISSe films without the Selenization process. The crystallinity, optical properties, and morphology of the CIGSSe films were changed by annealing temperature and film thickness. The band gap energy were found approximately 1.5 eV with the different film thickness.",

author = "Quyen Do and Manh, {Nguyen The} and Triet, {Luong Nguyen Dai} and Yura Choi and Lee, {Young Woo} and Yonghyun Cho and Kwangjae Lee and Namchul Cho",

note = "KAUST Repository Item: Exported on 2020-12-25 Acknowledgements: This work was supported by the Soonchunhyang University Research Fund (No.20170810). This work was supported by the Korea Institute of Energy Technology Evaluation and Planning (KETEP) and the Ministry of Trade, Industry & Energy (MOTIE) of the Republic of Korea under Grant No. 20184030202130.",

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AU - Do, Quyen

AU - Manh, Nguyen The

AU - Triet, Luong Nguyen Dai

AU - Choi, Yura

AU - Lee, Young Woo

AU - Cho, Yonghyun

AU - Lee, Kwangjae

AU - Cho, Namchul

N1 - KAUST Repository Item: Exported on 2020-12-25 Acknowledgements: This work was supported by the Soonchunhyang University Research Fund (No.20170810). This work was supported by the Korea Institute of Energy Technology Evaluation and Planning (KETEP) and the Ministry of Trade, Industry & Energy (MOTIE) of the Republic of Korea under Grant No. 20184030202130.

PY - 2020/12/18

Y1 - 2020/12/18

N2 - We demonstrated the solution-processed CuIn(S,Se)2 solar cells using a diamine/dithiol cosolvent. Compared to the traditional CIGS materials made with the Selenization process, we fabricated CISSe films without the Selenization process. The crystallinity, optical properties, and morphology of the CIGSSe films were changed by annealing temperature and film thickness. The band gap energy were found approximately 1.5 eV with the different film thickness.

AB - We demonstrated the solution-processed CuIn(S,Se)2 solar cells using a diamine/dithiol cosolvent. Compared to the traditional CIGS materials made with the Selenization process, we fabricated CISSe films without the Selenization process. The crystallinity, optical properties, and morphology of the CIGSSe films were changed by annealing temperature and film thickness. The band gap energy were found approximately 1.5 eV with the different film thickness.

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JO - Molecular Crystals and Liquid Crystals

JF - Molecular Crystals and Liquid Crystals

IS - 1

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Controlling the morphology of solution-processed CuIn(SSe)2 absorber layers by film thickness and annealing temperature

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