Controlled growth of high-density CdS and CdSe nanorod arrays on selective facets of two-dimensional semiconductor nanoplates

Xue-Jun Wu; Junze Chen; Chaoliang Tan; Yihan Zhu; Yu Han; Hua Zhang

doi:10.1038/nchem.2473

Controlled growth of high-density CdS and CdSe nanorod arrays on selective facets of two-dimensional semiconductor nanoplates

Xue-Jun Wu, Junze Chen, Chaoliang Tan, Yihan Zhu, Yu Han, Hua Zhang

Research output: Contribution to journal › Article › peer-review

171 Scopus citations

Abstract

The rational synthesis of hierarchical three-dimensional nanostructures with specific compositions, morphologies and functionalities is important for applications in a variety of fields ranging from energy conversion and electronics to biotechnology. Here, we report a seeded growth approach for the controlled epitaxial growth of three types of hierarchical one-dimensional (1D)/two-dimensional (2D) nanostructures, where nanorod arrays of II-VI semiconductor CdS or CdSe are grown on the selective facets of hexagonal-shaped nanoplates, either on the two basal facets of the nanoplate, or on one basal facet, or on the two basal facets and six side facets. The seed engineering of 2D hexagonal-shaped nanoplates is the key factor for growth of the three resulting types of 1D/2D nanostructures. The wurtzite- and zinc-blende-type polymorphs of semiconductors are used to determine the facet-selective epitaxial growth of 1D nanorod arrays, resulting in the formation of different hierarchical three-dimensional (3D) nanostructures. © 2016 Macmillan Publishers Limited. All rights reserved.

Original language	English (US)
Pages (from-to)	470-475
Number of pages	6
Journal	Nature Chemistry
Volume	8
Issue number	5
DOIs	https://doi.org/10.1038/nchem.2473
State	Published - Mar 14 2016

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported by Ministry of Education (MOE) under AcRF Tier 2 (ARC 26/13, no. MOE2013-T2-1-034; ARC 19/15, no. MOE2014-T2-2-093) and AcRF Tier 1 (RGT18/13, RG5/13), and Nanyang Technological University (NTU) under a start-up grant (M4081296.070.500000) in Singapore. Research was also conducted by the NTU-HUJ-BGU Nanomaterials for Energy and Water Management Programme at the Campus for Research Excellence and Technological Enterprise (CREATE), which is supported by the National Research Foundation of the Prime Minister's Office, Singapore. Y.H. thanks the King Abdullah University of Science and Technology for the baseline (BAS/1/1372-01-01) and CCF (FCC/1/1972-03-01) research grants.

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title = "Controlled growth of high-density CdS and CdSe nanorod arrays on selective facets of two-dimensional semiconductor nanoplates",

abstract = "The rational synthesis of hierarchical three-dimensional nanostructures with specific compositions, morphologies and functionalities is important for applications in a variety of fields ranging from energy conversion and electronics to biotechnology. Here, we report a seeded growth approach for the controlled epitaxial growth of three types of hierarchical one-dimensional (1D)/two-dimensional (2D) nanostructures, where nanorod arrays of II-VI semiconductor CdS or CdSe are grown on the selective facets of hexagonal-shaped nanoplates, either on the two basal facets of the nanoplate, or on one basal facet, or on the two basal facets and six side facets. The seed engineering of 2D hexagonal-shaped nanoplates is the key factor for growth of the three resulting types of 1D/2D nanostructures. The wurtzite- and zinc-blende-type polymorphs of semiconductors are used to determine the facet-selective epitaxial growth of 1D nanorod arrays, resulting in the formation of different hierarchical three-dimensional (3D) nanostructures. {\textcopyright} 2016 Macmillan Publishers Limited. All rights reserved.",

author = "Xue-Jun Wu and Junze Chen and Chaoliang Tan and Yihan Zhu and Yu Han and Hua Zhang",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was supported by Ministry of Education (MOE) under AcRF Tier 2 (ARC 26/13, no. MOE2013-T2-1-034; ARC 19/15, no. MOE2014-T2-2-093) and AcRF Tier 1 (RGT18/13, RG5/13), and Nanyang Technological University (NTU) under a start-up grant (M4081296.070.500000) in Singapore. Research was also conducted by the NTU-HUJ-BGU Nanomaterials for Energy and Water Management Programme at the Campus for Research Excellence and Technological Enterprise (CREATE), which is supported by the National Research Foundation of the Prime Minister's Office, Singapore. Y.H. thanks the King Abdullah University of Science and Technology for the baseline (BAS/1/1372-01-01) and CCF (FCC/1/1972-03-01) research grants.",

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AU - Han, Yu

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N2 - The rational synthesis of hierarchical three-dimensional nanostructures with specific compositions, morphologies and functionalities is important for applications in a variety of fields ranging from energy conversion and electronics to biotechnology. Here, we report a seeded growth approach for the controlled epitaxial growth of three types of hierarchical one-dimensional (1D)/two-dimensional (2D) nanostructures, where nanorod arrays of II-VI semiconductor CdS or CdSe are grown on the selective facets of hexagonal-shaped nanoplates, either on the two basal facets of the nanoplate, or on one basal facet, or on the two basal facets and six side facets. The seed engineering of 2D hexagonal-shaped nanoplates is the key factor for growth of the three resulting types of 1D/2D nanostructures. The wurtzite- and zinc-blende-type polymorphs of semiconductors are used to determine the facet-selective epitaxial growth of 1D nanorod arrays, resulting in the formation of different hierarchical three-dimensional (3D) nanostructures. © 2016 Macmillan Publishers Limited. All rights reserved.

AB - The rational synthesis of hierarchical three-dimensional nanostructures with specific compositions, morphologies and functionalities is important for applications in a variety of fields ranging from energy conversion and electronics to biotechnology. Here, we report a seeded growth approach for the controlled epitaxial growth of three types of hierarchical one-dimensional (1D)/two-dimensional (2D) nanostructures, where nanorod arrays of II-VI semiconductor CdS or CdSe are grown on the selective facets of hexagonal-shaped nanoplates, either on the two basal facets of the nanoplate, or on one basal facet, or on the two basal facets and six side facets. The seed engineering of 2D hexagonal-shaped nanoplates is the key factor for growth of the three resulting types of 1D/2D nanostructures. The wurtzite- and zinc-blende-type polymorphs of semiconductors are used to determine the facet-selective epitaxial growth of 1D nanorod arrays, resulting in the formation of different hierarchical three-dimensional (3D) nanostructures. © 2016 Macmillan Publishers Limited. All rights reserved.

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Controlled growth of high-density CdS and CdSe nanorod arrays on selective facets of two-dimensional semiconductor nanoplates

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