Controllable Chemical Vapor Deposition Growth of High-Mobility Bi2O2Te Nanosheets

Hang Liu, Ruofan Sun, Xu Lu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Air-stable bismuth oxychalcogenides (Bi2O2X) have exhibited exceptional electrical properties and ultrahigh mobility in high-performance electronic devices. However, although Bi2O2Se is commonly used, there have been few reported uses of Bi2O2Te because of its challenging preparation process. This study aimed to synthesize two-dimensional Bi2O2Te nanosheets using the chemical vapor deposition method. Bi2O2Te nanosheets with different thicknesses were obtained by adjusting the growth conditions, such as temperature. The as-prepared Bi2O2Te single crystal exhibited a Hall mobility of 496 cm2 V-1 s-1 at 300 K, which reached 5000 cm2 V-1 s-1 at 2 K. The results expand the Bi2O2X family and show Bi2O2Te to be a promising candidate for use in highly efficient electronic devices.

Original languageEnglish (US)
Pages (from-to)16752-16758
Number of pages7
JournalInorganic chemistry
Volume62
Issue number41
DOIs
StatePublished - Oct 16 2023

Bibliographical note

Publisher Copyright:
© 2023 American Chemical Society.

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Inorganic Chemistry

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