Controllable Chemical Vapor Deposition Growth of High-Mobility Bi2O2Te Nanosheets

Hang Liu; Ruofan Sun; Xu Lu

doi:10.1021/acs.inorgchem.3c02033

Controllable Chemical Vapor Deposition Growth of High-Mobility Bi₂O₂Te Nanosheets

Hang Liu, Ruofan Sun, Xu Lu^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Air-stable bismuth oxychalcogenides (Bi₂O₂X) have exhibited exceptional electrical properties and ultrahigh mobility in high-performance electronic devices. However, although Bi₂O₂Se is commonly used, there have been few reported uses of Bi₂O₂Te because of its challenging preparation process. This study aimed to synthesize two-dimensional Bi₂O₂Te nanosheets using the chemical vapor deposition method. Bi₂O₂Te nanosheets with different thicknesses were obtained by adjusting the growth conditions, such as temperature. The as-prepared Bi₂O₂Te single crystal exhibited a Hall mobility of 496 cm² V^-1 s^-1 at 300 K, which reached 5000 cm² V^-1 s^-1 at 2 K. The results expand the Bi₂O₂X family and show Bi₂O₂Te to be a promising candidate for use in highly efficient electronic devices.

Original language	English (US)
Pages (from-to)	16752-16758
Number of pages	7
Journal	Inorganic chemistry
Volume	62
Issue number	41
DOIs	https://doi.org/10.1021/acs.inorgchem.3c02033
State	Published - Oct 16 2023

Bibliographical note

Publisher Copyright:
© 2023 American Chemical Society.

ASJC Scopus subject areas

Physical and Theoretical Chemistry
Inorganic Chemistry

Access to Document

10.1021/acs.inorgchem.3c02033

Cite this

@article{6258ca71679443d08a74d739241b4ef0,

title = "Controllable Chemical Vapor Deposition Growth of High-Mobility Bi2O2Te Nanosheets",

abstract = "Air-stable bismuth oxychalcogenides (Bi2O2X) have exhibited exceptional electrical properties and ultrahigh mobility in high-performance electronic devices. However, although Bi2O2Se is commonly used, there have been few reported uses of Bi2O2Te because of its challenging preparation process. This study aimed to synthesize two-dimensional Bi2O2Te nanosheets using the chemical vapor deposition method. Bi2O2Te nanosheets with different thicknesses were obtained by adjusting the growth conditions, such as temperature. The as-prepared Bi2O2Te single crystal exhibited a Hall mobility of 496 cm2 V-1 s-1 at 300 K, which reached 5000 cm2 V-1 s-1 at 2 K. The results expand the Bi2O2X family and show Bi2O2Te to be a promising candidate for use in highly efficient electronic devices.",

author = "Hang Liu and Ruofan Sun and Xu Lu",

note = "Publisher Copyright: {\textcopyright} 2023 American Chemical Society.",

year = "2023",

month = oct,

day = "16",

doi = "10.1021/acs.inorgchem.3c02033",

language = "English (US)",

volume = "62",

pages = "16752--16758",

journal = "Inorganic chemistry",

issn = "0020-1669",

publisher = "American Chemical Society",

number = "41",

}

TY - JOUR

T1 - Controllable Chemical Vapor Deposition Growth of High-Mobility Bi2O2Te Nanosheets

AU - Liu, Hang

AU - Sun, Ruofan

AU - Lu, Xu

PY - 2023/10/16

Y1 - 2023/10/16

N2 - Air-stable bismuth oxychalcogenides (Bi2O2X) have exhibited exceptional electrical properties and ultrahigh mobility in high-performance electronic devices. However, although Bi2O2Se is commonly used, there have been few reported uses of Bi2O2Te because of its challenging preparation process. This study aimed to synthesize two-dimensional Bi2O2Te nanosheets using the chemical vapor deposition method. Bi2O2Te nanosheets with different thicknesses were obtained by adjusting the growth conditions, such as temperature. The as-prepared Bi2O2Te single crystal exhibited a Hall mobility of 496 cm2 V-1 s-1 at 300 K, which reached 5000 cm2 V-1 s-1 at 2 K. The results expand the Bi2O2X family and show Bi2O2Te to be a promising candidate for use in highly efficient electronic devices.

AB - Air-stable bismuth oxychalcogenides (Bi2O2X) have exhibited exceptional electrical properties and ultrahigh mobility in high-performance electronic devices. However, although Bi2O2Se is commonly used, there have been few reported uses of Bi2O2Te because of its challenging preparation process. This study aimed to synthesize two-dimensional Bi2O2Te nanosheets using the chemical vapor deposition method. Bi2O2Te nanosheets with different thicknesses were obtained by adjusting the growth conditions, such as temperature. The as-prepared Bi2O2Te single crystal exhibited a Hall mobility of 496 cm2 V-1 s-1 at 300 K, which reached 5000 cm2 V-1 s-1 at 2 K. The results expand the Bi2O2X family and show Bi2O2Te to be a promising candidate for use in highly efficient electronic devices.

UR - http://www.scopus.com/inward/record.url?scp=85175586063&partnerID=8YFLogxK

U2 - 10.1021/acs.inorgchem.3c02033

DO - 10.1021/acs.inorgchem.3c02033

M3 - Article

C2 - 37782820

AN - SCOPUS:85175586063

SN - 0020-1669

VL - 62

SP - 16752

EP - 16758

JO - Inorganic chemistry

JF - Inorganic chemistry

IS - 41

ER -