Control of stress and crystalline quality in GaInN films used for green emitters

Motoaki Iwaya; Aya Miura; Ryota Senda; Tetsuya Nagai; Takeshi Kawashima; Daisuke Iida; Satoshi Kamiyama; Hiroshi Amano; Isamu Akasaki

doi:10.1016/j.jcrysgro.2008.08.038

Control of stress and crystalline quality in GaInN films used for green emitters

Motoaki Iwaya, Aya Miura, Ryota Senda, Tetsuya Nagai, Takeshi Kawashima, Daisuke Iida, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

We succeeded in growing almost completely relaxed, high-quality, thick GaInN films on an m-plane GaN template with grooves along the 〈0 0 0 1〉 direction, using lateral-growth technology. Reciprocal space mapping of asymmetrical X-ray diffraction confirmed almost complete relaxation. By transmission electroscopic characterization, the growth of GaInN film with a threading dislocation density of approximately 1×108 cm-2 was confirmed. © 2008 Elsevier B.V. All rights reserved.

Original language	English (US)
Pages (from-to)	4920-4922
Number of pages	3
Journal	Journal of Crystal Growth
Volume	310
Issue number	23
DOIs	https://doi.org/10.1016/j.jcrysgro.2008.08.038
State	Published - Nov 15 2008
Externally published	Yes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-09-21

ASJC Scopus subject areas

Materials Chemistry
Inorganic Chemistry
Condensed Matter Physics

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title = "Control of stress and crystalline quality in GaInN films used for green emitters",

abstract = "We succeeded in growing almost completely relaxed, high-quality, thick GaInN films on an m-plane GaN template with grooves along the 〈0 0 0 1〉 direction, using lateral-growth technology. Reciprocal space mapping of asymmetrical X-ray diffraction confirmed almost complete relaxation. By transmission electroscopic characterization, the growth of GaInN film with a threading dislocation density of approximately 1×108 cm-2 was confirmed. {\textcopyright} 2008 Elsevier B.V. All rights reserved.",

author = "Motoaki Iwaya and Aya Miura and Ryota Senda and Tetsuya Nagai and Takeshi Kawashima and Daisuke Iida and Satoshi Kamiyama and Hiroshi Amano and Isamu Akasaki",

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doi = "10.1016/j.jcrysgro.2008.08.038",

language = "English (US)",

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T1 - Control of stress and crystalline quality in GaInN films used for green emitters

AU - Iwaya, Motoaki

AU - Miura, Aya

AU - Senda, Ryota

AU - Nagai, Tetsuya

AU - Kawashima, Takeshi

AU - Iida, Daisuke

AU - Kamiyama, Satoshi

AU - Amano, Hiroshi

AU - Akasaki, Isamu

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-21

PY - 2008/11/15

Y1 - 2008/11/15

N2 - We succeeded in growing almost completely relaxed, high-quality, thick GaInN films on an m-plane GaN template with grooves along the 〈0 0 0 1〉 direction, using lateral-growth technology. Reciprocal space mapping of asymmetrical X-ray diffraction confirmed almost complete relaxation. By transmission electroscopic characterization, the growth of GaInN film with a threading dislocation density of approximately 1×108 cm-2 was confirmed. © 2008 Elsevier B.V. All rights reserved.

AB - We succeeded in growing almost completely relaxed, high-quality, thick GaInN films on an m-plane GaN template with grooves along the 〈0 0 0 1〉 direction, using lateral-growth technology. Reciprocal space mapping of asymmetrical X-ray diffraction confirmed almost complete relaxation. By transmission electroscopic characterization, the growth of GaInN film with a threading dislocation density of approximately 1×108 cm-2 was confirmed. © 2008 Elsevier B.V. All rights reserved.

UR - https://linkinghub.elsevier.com/retrieve/pii/S0022024808007458

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DO - 10.1016/j.jcrysgro.2008.08.038

M3 - Article

SN - 0022-0248

VL - 310

SP - 4920

EP - 4922

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 23

ER -

Control of stress and crystalline quality in GaInN films used for green emitters

Abstract

Bibliographical note

ASJC Scopus subject areas

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