Control of stress and crystalline quality in GaInN films used for green emitters

Motoaki Iwaya, Aya Miura, Ryota Senda, Tetsuya Nagai, Takeshi Kawashima, Daisuke Iida, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


We succeeded in growing almost completely relaxed, high-quality, thick GaInN films on an m-plane GaN template with grooves along the 〈0 0 0 1〉 direction, using lateral-growth technology. Reciprocal space mapping of asymmetrical X-ray diffraction confirmed almost complete relaxation. By transmission electroscopic characterization, the growth of GaInN film with a threading dislocation density of approximately 1×108 cm-2 was confirmed. © 2008 Elsevier B.V. All rights reserved.
Original languageEnglish (US)
Pages (from-to)4920-4922
Number of pages3
JournalJournal of Crystal Growth
Issue number23
StatePublished - Nov 15 2008
Externally publishedYes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-09-21

ASJC Scopus subject areas

  • Materials Chemistry
  • Inorganic Chemistry
  • Condensed Matter Physics


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