Abstract
We investigated the electrical properties of Mg-doped a-plane Ga1-xInxN (0
Original language | English (US) |
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Pages (from-to) | 4996-4998 |
Number of pages | 3 |
Journal | Journal of Crystal Growth |
Volume | 310 |
Issue number | 23 |
DOIs | |
State | Published - Nov 15 2008 |
Externally published | Yes |
Bibliographical note
Generated from Scopus record by KAUST IRTS on 2023-09-21ASJC Scopus subject areas
- Materials Chemistry
- Inorganic Chemistry
- Condensed Matter Physics