Control of crystallinity of GaN grown on sapphire substrate by metalorganic vapor phase epitaxy using in situ X-ray diffraction monitoring method

Motoaki Iwaya, Taiji Yamamoto, Daiki Tanaka, Daisuke Iida, Satoshi Kamiyama, Tetsuya Takeuchi, Isamu Akasaki

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

In this study, we investigated the application of a novel in situ X-ray diffraction (XRD) monitoring method to control GaN crystal growth using a low-temperature (LT)-deposited buffer layer. We found that this method is useful in controlling the annealing of the LT-buffer layer, which strongly depends on the crystallinity of GaN. Accordingly, if we employ in situ XRD grown on GaN using LT-buffer layer on sapphire substrate, the optimization of the annealing conditions will become easier because it would be possible to determine by only one growth procedure. Therefore, we expect that this method will serve as a new and helpful optimization tool for crystal growth.
Original languageEnglish (US)
Pages (from-to)367-371
Number of pages5
JournalJournal of Crystal Growth
Volume401
DOIs
StatePublished - Sep 1 2014
Externally publishedYes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-09-21

ASJC Scopus subject areas

  • Materials Chemistry
  • Inorganic Chemistry
  • Condensed Matter Physics

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