Continuous-wave operation of nonpolar GaN-based vertical-cavity surface-emitting lasers

Charles A. Forman; Seunggeun Lee; Erin C. Young; Jared A. Kearns; Daniel A. Cohen; John T. Leonard; Tal Margalith; Steven P. DenBaars; Shuji Nakamura

doi:10.1117/12.2314885

Continuous-wave operation of nonpolar GaN-based vertical-cavity surface-emitting lasers

Charles A. Forman, Seunggeun Lee, Erin C. Young, Jared A. Kearns, Daniel A. Cohen, John T. Leonard, Tal Margalith, Steven P. DenBaars, Shuji Nakamura

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Scopus citations

Abstract

This is the first demonstration of continuous-wave (CW) operation of nonpolar GaN-based VCSELs. These devices had a dual-dielectric distributed Bragg reflector (DBR) design with ion implanted apertures and III-nitride tunnel junction (TJ) intracavity contacts. Unlike c-plane devices, nonpolar GaN-based VCSELs have anisotropic gain that leads to a 100% polarization ratio and polarization-locked VCSEL arrays. Previous nonpolar devices were unable to lase under CW operation, notably due to the thermally-insulating bottom dielectric DBR. Based on thermal modeling using COMSOL, the main thermal pathway was restricted to a thin p-side metal contact that goes around the bottom DBR to the submount. Heat flow was further impaired as the Au-Au thermocompression flip-chip bond created cracks and voids in the p-side metal. The thermal performance was improved in our latest VCSELs by increasing the cavity length to 23λ and utilizing Au-In solid liquid interdiffusion bonding to create a more robust pathway for heat transport. This led to stable CW VCSEL operation for over 20 minutes. The peak output powers for a 6 μm aperture VCSEL under CW and pulsed operation were 150 μW and 700 μW, respectively. Lasing wavelengths were observed at 406 nm, 412 nm, and 419 nm. The fundamental transverse mode was observed without the presence of filamentary lasing.

Original language	English (US)
Title of host publication	Gallium Nitride Materials and Devices XIII
Publisher	SPIE
ISBN (Print)	9781510615496
DOIs	https://doi.org/10.1117/12.2314885
State	Published - Feb 23 2018
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2022-06-28
Acknowledgements: This work was supported by the Solid State Lighting and Energy Electronics Center (SSLEEC) at UCSB and the KACST-KAUST-UCSB Solid State Lighting Program. The authors would like to acknowledge Mitsubishi Chemical Corporation for providing high-quality GaN substrates. Research carried out here made extensive use of shared experimental facilities including the Materials Research Laboratory: an NSF MRSEC, supported by NSF DMR 1121053, the UCSB Nanofabrication Facility, and the California NanoSystems Institute (CNSI) at UCSB.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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10.1117/12.2314885

Cite this

@inproceedings{9757872b5ea04b4985744a905150bf5f,

title = "Continuous-wave operation of nonpolar GaN-based vertical-cavity surface-emitting lasers",

abstract = "This is the first demonstration of continuous-wave (CW) operation of nonpolar GaN-based VCSELs. These devices had a dual-dielectric distributed Bragg reflector (DBR) design with ion implanted apertures and III-nitride tunnel junction (TJ) intracavity contacts. Unlike c-plane devices, nonpolar GaN-based VCSELs have anisotropic gain that leads to a 100% polarization ratio and polarization-locked VCSEL arrays. Previous nonpolar devices were unable to lase under CW operation, notably due to the thermally-insulating bottom dielectric DBR. Based on thermal modeling using COMSOL, the main thermal pathway was restricted to a thin p-side metal contact that goes around the bottom DBR to the submount. Heat flow was further impaired as the Au-Au thermocompression flip-chip bond created cracks and voids in the p-side metal. The thermal performance was improved in our latest VCSELs by increasing the cavity length to 23λ and utilizing Au-In solid liquid interdiffusion bonding to create a more robust pathway for heat transport. This led to stable CW VCSEL operation for over 20 minutes. The peak output powers for a 6 μm aperture VCSEL under CW and pulsed operation were 150 μW and 700 μW, respectively. Lasing wavelengths were observed at 406 nm, 412 nm, and 419 nm. The fundamental transverse mode was observed without the presence of filamentary lasing.",

author = "Forman, {Charles A.} and Seunggeun Lee and Young, {Erin C.} and Kearns, {Jared A.} and Cohen, {Daniel A.} and Leonard, {John T.} and Tal Margalith and DenBaars, {Steven P.} and Shuji Nakamura",

note = "KAUST Repository Item: Exported on 2022-06-28 Acknowledgements: This work was supported by the Solid State Lighting and Energy Electronics Center (SSLEEC) at UCSB and the KACST-KAUST-UCSB Solid State Lighting Program. The authors would like to acknowledge Mitsubishi Chemical Corporation for providing high-quality GaN substrates. Research carried out here made extensive use of shared experimental facilities including the Materials Research Laboratory: an NSF MRSEC, supported by NSF DMR 1121053, the UCSB Nanofabrication Facility, and the California NanoSystems Institute (CNSI) at UCSB. This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

year = "2018",

month = feb,

day = "23",

doi = "10.1117/12.2314885",

language = "English (US)",

isbn = "9781510615496",

booktitle = "Gallium Nitride Materials and Devices XIII",

publisher = "SPIE",

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TY - GEN

T1 - Continuous-wave operation of nonpolar GaN-based vertical-cavity surface-emitting lasers

AU - Forman, Charles A.

AU - Lee, Seunggeun

AU - Young, Erin C.

AU - Kearns, Jared A.

AU - Cohen, Daniel A.

AU - Leonard, John T.

AU - Margalith, Tal

AU - DenBaars, Steven P.

AU - Nakamura, Shuji

N1 - KAUST Repository Item: Exported on 2022-06-28 Acknowledgements: This work was supported by the Solid State Lighting and Energy Electronics Center (SSLEEC) at UCSB and the KACST-KAUST-UCSB Solid State Lighting Program. The authors would like to acknowledge Mitsubishi Chemical Corporation for providing high-quality GaN substrates. Research carried out here made extensive use of shared experimental facilities including the Materials Research Laboratory: an NSF MRSEC, supported by NSF DMR 1121053, the UCSB Nanofabrication Facility, and the California NanoSystems Institute (CNSI) at UCSB. This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2018/2/23

Y1 - 2018/2/23

N2 - This is the first demonstration of continuous-wave (CW) operation of nonpolar GaN-based VCSELs. These devices had a dual-dielectric distributed Bragg reflector (DBR) design with ion implanted apertures and III-nitride tunnel junction (TJ) intracavity contacts. Unlike c-plane devices, nonpolar GaN-based VCSELs have anisotropic gain that leads to a 100% polarization ratio and polarization-locked VCSEL arrays. Previous nonpolar devices were unable to lase under CW operation, notably due to the thermally-insulating bottom dielectric DBR. Based on thermal modeling using COMSOL, the main thermal pathway was restricted to a thin p-side metal contact that goes around the bottom DBR to the submount. Heat flow was further impaired as the Au-Au thermocompression flip-chip bond created cracks and voids in the p-side metal. The thermal performance was improved in our latest VCSELs by increasing the cavity length to 23λ and utilizing Au-In solid liquid interdiffusion bonding to create a more robust pathway for heat transport. This led to stable CW VCSEL operation for over 20 minutes. The peak output powers for a 6 μm aperture VCSEL under CW and pulsed operation were 150 μW and 700 μW, respectively. Lasing wavelengths were observed at 406 nm, 412 nm, and 419 nm. The fundamental transverse mode was observed without the presence of filamentary lasing.

AB - This is the first demonstration of continuous-wave (CW) operation of nonpolar GaN-based VCSELs. These devices had a dual-dielectric distributed Bragg reflector (DBR) design with ion implanted apertures and III-nitride tunnel junction (TJ) intracavity contacts. Unlike c-plane devices, nonpolar GaN-based VCSELs have anisotropic gain that leads to a 100% polarization ratio and polarization-locked VCSEL arrays. Previous nonpolar devices were unable to lase under CW operation, notably due to the thermally-insulating bottom dielectric DBR. Based on thermal modeling using COMSOL, the main thermal pathway was restricted to a thin p-side metal contact that goes around the bottom DBR to the submount. Heat flow was further impaired as the Au-Au thermocompression flip-chip bond created cracks and voids in the p-side metal. The thermal performance was improved in our latest VCSELs by increasing the cavity length to 23λ and utilizing Au-In solid liquid interdiffusion bonding to create a more robust pathway for heat transport. This led to stable CW VCSEL operation for over 20 minutes. The peak output powers for a 6 μm aperture VCSEL under CW and pulsed operation were 150 μW and 700 μW, respectively. Lasing wavelengths were observed at 406 nm, 412 nm, and 419 nm. The fundamental transverse mode was observed without the presence of filamentary lasing.

UR - http://hdl.handle.net/10754/679400

UR - https://www.spiedigitallibrary.org/conference-proceedings-of-spie/10532/2314885/Continuous-wave-operation-of-nonpolar-GaN-based-vertical-cavity-surface/10.1117/12.2314885.full

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U2 - 10.1117/12.2314885

DO - 10.1117/12.2314885

M3 - Conference contribution

SN - 9781510615496

BT - Gallium Nitride Materials and Devices XIII

PB - SPIE

ER -

Continuous-wave operation of nonpolar GaN-based vertical-cavity surface-emitting lasers

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