Continuous-wave operation of a $(20\bar{2}\bar{1})$ InGaN laser diode with a photoelectrochemically etched current aperture

Ludovico Megalini; Daniel L. Becerra; Robert M. Farrell; A. Pourhashemi; James S. Speck; Shuji Nakamura; Steven P. DenBaars; Daniel A. Cohen

doi:10.7567/APEX.8.042701

Continuous-wave operation of a $(20\bar{2}\bar{1})$ InGaN laser diode with a photoelectrochemically etched current aperture

Ludovico Megalini, Daniel L. Becerra, Robert M. Farrell, A. Pourhashemi, James S. Speck, Shuji Nakamura, Steven P. DenBaars, Daniel A. Cohen

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

© 2015 The Japan Society of Applied Physics. We demonstrated selective and controllable undercut etching of the InGaN/GaN multiple quantum well (MQW) active region of a (2021) laser diode (LD) structure by photoelectrochemical etching. This technique was used to fabricate current aperture edge-emitting blue laser diodes (CALDs), whose performance was compared with that of shallow-etched ridge LDs with a nominally identical epitaxial structure. The threshold current density, threshold voltage, peak output power, and series resistance for the CA-LD (shallow-etched LD) with a 2.5-μm-wide active region were 4.4 (8.1) kA/cm$^{2}$, 6.1 (7.7) V, 96.5 (63.5)mW, and 4.7 (6.0)Ω under pulsed conditions and before facet coating, respectively.

Original language	English (US)
Pages (from-to)	042701
Journal	Applied Physics Express
Volume	8
Issue number	4
DOIs	https://doi.org/10.7567/APEX.8.042701
State	Published - Mar 6 2015
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported by the Solid State Lighting and Energy Center (SSLEEC) and the KACST-KAUST-UCSB Solid State Lighting Program (SSLP) at UCSB. A portion of this work was carried out in the UCSB nanofabrication facility, part of the NSF NNIN network (ECS-0335765), as well as the UCSB MRL, which is supported by the NSF MRSEC program (DMR1121053).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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@article{f94280493f4b4bc68d8b0ecd769d41c2,

title = "Continuous-wave operation of a $(20\bar{2}\bar{1})$ InGaN laser diode with a photoelectrochemically etched current aperture",

abstract = "{\textcopyright} 2015 The Japan Society of Applied Physics. We demonstrated selective and controllable undercut etching of the InGaN/GaN multiple quantum well (MQW) active region of a (2021) laser diode (LD) structure by photoelectrochemical etching. This technique was used to fabricate current aperture edge-emitting blue laser diodes (CALDs), whose performance was compared with that of shallow-etched ridge LDs with a nominally identical epitaxial structure. The threshold current density, threshold voltage, peak output power, and series resistance for the CA-LD (shallow-etched LD) with a 2.5-μm-wide active region were 4.4 (8.1) kA/cm$^{2}$, 6.1 (7.7) V, 96.5 (63.5)mW, and 4.7 (6.0)Ω under pulsed conditions and before facet coating, respectively.",

author = "Ludovico Megalini and Becerra, {Daniel L.} and Farrell, {Robert M.} and A. Pourhashemi and Speck, {James S.} and Shuji Nakamura and DenBaars, {Steven P.} and Cohen, {Daniel A.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was supported by the Solid State Lighting and Energy Center (SSLEEC) and the KACST-KAUST-UCSB Solid State Lighting Program (SSLP) at UCSB. A portion of this work was carried out in the UCSB nanofabrication facility, part of the NSF NNIN network (ECS-0335765), as well as the UCSB MRL, which is supported by the NSF MRSEC program (DMR1121053). This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

year = "2015",

month = mar,

day = "6",

doi = "10.7567/APEX.8.042701",

language = "English (US)",

volume = "8",

pages = "042701",

journal = "Applied Physics Express",

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publisher = "Japan Society of Applied Physics",

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TY - JOUR

T1 - Continuous-wave operation of a $(20\bar{2}\bar{1})$ InGaN laser diode with a photoelectrochemically etched current aperture

AU - Megalini, Ludovico

AU - Becerra, Daniel L.

AU - Farrell, Robert M.

AU - Pourhashemi, A.

AU - Speck, James S.

AU - Nakamura, Shuji

AU - DenBaars, Steven P.

AU - Cohen, Daniel A.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was supported by the Solid State Lighting and Energy Center (SSLEEC) and the KACST-KAUST-UCSB Solid State Lighting Program (SSLP) at UCSB. A portion of this work was carried out in the UCSB nanofabrication facility, part of the NSF NNIN network (ECS-0335765), as well as the UCSB MRL, which is supported by the NSF MRSEC program (DMR1121053). This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2015/3/6

Y1 - 2015/3/6

N2 - © 2015 The Japan Society of Applied Physics. We demonstrated selective and controllable undercut etching of the InGaN/GaN multiple quantum well (MQW) active region of a (2021) laser diode (LD) structure by photoelectrochemical etching. This technique was used to fabricate current aperture edge-emitting blue laser diodes (CALDs), whose performance was compared with that of shallow-etched ridge LDs with a nominally identical epitaxial structure. The threshold current density, threshold voltage, peak output power, and series resistance for the CA-LD (shallow-etched LD) with a 2.5-μm-wide active region were 4.4 (8.1) kA/cm$^{2}$, 6.1 (7.7) V, 96.5 (63.5)mW, and 4.7 (6.0)Ω under pulsed conditions and before facet coating, respectively.

AB - © 2015 The Japan Society of Applied Physics. We demonstrated selective and controllable undercut etching of the InGaN/GaN multiple quantum well (MQW) active region of a (2021) laser diode (LD) structure by photoelectrochemical etching. This technique was used to fabricate current aperture edge-emitting blue laser diodes (CALDs), whose performance was compared with that of shallow-etched ridge LDs with a nominally identical epitaxial structure. The threshold current density, threshold voltage, peak output power, and series resistance for the CA-LD (shallow-etched LD) with a 2.5-μm-wide active region were 4.4 (8.1) kA/cm$^{2}$, 6.1 (7.7) V, 96.5 (63.5)mW, and 4.7 (6.0)Ω under pulsed conditions and before facet coating, respectively.

UR - http://hdl.handle.net/10754/597852

UR - https://iopscience.iop.org/article/10.7567/APEX.8.042701

UR - http://www.scopus.com/inward/record.url?scp=84927929513&partnerID=8YFLogxK

U2 - 10.7567/APEX.8.042701

DO - 10.7567/APEX.8.042701

M3 - Article

SN - 1882-0778

VL - 8

SP - 042701

JO - Applied Physics Express

JF - Applied Physics Express

IS - 4

ER -

Continuous-wave operation of a $(20\bar{2}\bar{1})$ InGaN laser diode with a photoelectrochemically etched current aperture

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