Continuous-wave operation of a $(20\bar{2}\bar{1})$ InGaN laser diode with a photoelectrochemically etched current aperture

Ludovico Megalini, Daniel L. Becerra, Robert M. Farrell, A. Pourhashemi, James S. Speck, Shuji Nakamura, Steven P. DenBaars, Daniel A. Cohen

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© 2015 The Japan Society of Applied Physics. We demonstrated selective and controllable undercut etching of the InGaN/GaN multiple quantum well (MQW) active region of a (2021) laser diode (LD) structure by photoelectrochemical etching. This technique was used to fabricate current aperture edge-emitting blue laser diodes (CALDs), whose performance was compared with that of shallow-etched ridge LDs with a nominally identical epitaxial structure. The threshold current density, threshold voltage, peak output power, and series resistance for the CA-LD (shallow-etched LD) with a 2.5-μm-wide active region were 4.4 (8.1) kA/cm$^{2}$, 6.1 (7.7) V, 96.5 (63.5)mW, and 4.7 (6.0)Ω under pulsed conditions and before facet coating, respectively.
Original languageEnglish (US)
Pages (from-to)042701
JournalApplied Physics Express
Issue number4
StatePublished - Mar 6 2015
Externally publishedYes

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