Contact Resistance Reduction of ZnO Thin Film Transistors (TFTs) with Saw-Shaped Electrode

Woojin Park; Sohail F. Shaikh; Jungwook Min; Sang Kyung Lee; Byoung Hun Lee; Muhammad Mustafa Hussain

doi:10.1088/1361-6528/aac4b9

Contact Resistance Reduction of ZnO Thin Film Transistors (TFTs) with Saw-Shaped Electrode

Woojin Park, Sohail F. Shaikh, Jungwook Min, Sang Kyung Lee, Byoung Hun Lee, Muhammad Mustafa Hussain

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We report a saw-shaped electrode architecture ZnO thin film transistor (TFT) for effectively increase channel width. Such a saw-shaped electrode has ~2 times longer contact line at the contact metal/ZnO channel junction. We experimentally observed an enhancement in the output drive current by 50% and reduction in the contact resistance by over 50%, when compared to a typical shaped electrode ZnO TFT consuming the same chip area. This performance enhancement is attributed to extension of channel width. This technique can contribute to device performance enhancement and especially reduction in the contact resistance which is a serious challenge.

Original language	English (US)
Pages (from-to)	325202
Journal	Nanotechnology
Volume	29
Issue number	32
DOIs	https://doi.org/10.1088/1361-6528/aac4b9
State	Published - Jun 5 2018

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): OSR-2015-Sensors-2707, OSR2016-KKI 2880
Acknowledgements: This publication is based upon work supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No. Sensor Innovation Initiative OSR-2015-Sensors-2707 and KAUST-KFUPM Special Initiative OSR2016-KKI 2880.

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10.1088/1361-6528/aac4b9

https://repository.kaust.edu.sa/bitstream/10754/627930/1/Park%2bet%2bal_2018_Nanotechnology_10.1088_1361-6528_aac4b9.pdf

Cite this

@article{1b0921d64c8b4ea0becd616ff7980a7d,

title = "Contact Resistance Reduction of ZnO Thin Film Transistors (TFTs) with Saw-Shaped Electrode",

abstract = "We report a saw-shaped electrode architecture ZnO thin film transistor (TFT) for effectively increase channel width. Such a saw-shaped electrode has ~2 times longer contact line at the contact metal/ZnO channel junction. We experimentally observed an enhancement in the output drive current by 50% and reduction in the contact resistance by over 50%, when compared to a typical shaped electrode ZnO TFT consuming the same chip area. This performance enhancement is attributed to extension of channel width. This technique can contribute to device performance enhancement and especially reduction in the contact resistance which is a serious challenge.",

author = "Woojin Park and Shaikh, {Sohail F.} and Jungwook Min and Lee, {Sang Kyung} and Lee, {Byoung Hun} and Hussain, {Muhammad Mustafa}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): OSR-2015-Sensors-2707, OSR2016-KKI 2880 Acknowledgements: This publication is based upon work supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No. Sensor Innovation Initiative OSR-2015-Sensors-2707 and KAUST-KFUPM Special Initiative OSR2016-KKI 2880.",

year = "2018",

month = jun,

day = "5",

doi = "10.1088/1361-6528/aac4b9",

language = "English (US)",

volume = "29",

pages = "325202",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing",

number = "32",

}

TY - JOUR

T1 - Contact Resistance Reduction of ZnO Thin Film Transistors (TFTs) with Saw-Shaped Electrode

AU - Park, Woojin

AU - Shaikh, Sohail F.

AU - Min, Jungwook

AU - Lee, Sang Kyung

AU - Lee, Byoung Hun

AU - Hussain, Muhammad Mustafa

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): OSR-2015-Sensors-2707, OSR2016-KKI 2880 Acknowledgements: This publication is based upon work supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No. Sensor Innovation Initiative OSR-2015-Sensors-2707 and KAUST-KFUPM Special Initiative OSR2016-KKI 2880.

PY - 2018/6/5

Y1 - 2018/6/5

N2 - We report a saw-shaped electrode architecture ZnO thin film transistor (TFT) for effectively increase channel width. Such a saw-shaped electrode has ~2 times longer contact line at the contact metal/ZnO channel junction. We experimentally observed an enhancement in the output drive current by 50% and reduction in the contact resistance by over 50%, when compared to a typical shaped electrode ZnO TFT consuming the same chip area. This performance enhancement is attributed to extension of channel width. This technique can contribute to device performance enhancement and especially reduction in the contact resistance which is a serious challenge.

AB - We report a saw-shaped electrode architecture ZnO thin film transistor (TFT) for effectively increase channel width. Such a saw-shaped electrode has ~2 times longer contact line at the contact metal/ZnO channel junction. We experimentally observed an enhancement in the output drive current by 50% and reduction in the contact resistance by over 50%, when compared to a typical shaped electrode ZnO TFT consuming the same chip area. This performance enhancement is attributed to extension of channel width. This technique can contribute to device performance enhancement and especially reduction in the contact resistance which is a serious challenge.

UR - http://hdl.handle.net/10754/627930

UR - http://iopscience.iop.org/article/10.1088/1361-6528/aac4b9

UR - http://www.scopus.com/inward/record.url?scp=85048316079&partnerID=8YFLogxK

U2 - 10.1088/1361-6528/aac4b9

DO - 10.1088/1361-6528/aac4b9

M3 - Article

C2 - 29761790

SN - 0957-4484

VL - 29

SP - 325202

JO - Nanotechnology

JF - Nanotechnology

IS - 32

ER -

Contact Resistance Reduction of ZnO Thin Film Transistors (TFTs) with Saw-Shaped Electrode

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