TY - CHAP
T1 - Conductive AFM of 2D materials and heterostructures for nanoelectronics
AU - Giannazzo, Filippo
AU - Greco, Giuseppe
AU - Roccaforte, Fabrizio
AU - Mahata, Chandreswar
AU - Lanza, Mario
N1 - Generated from Scopus record by KAUST IRTS on 2021-03-16
PY - 2019/1/1
Y1 - 2019/1/1
N2 - Two-dimensional materials (2DM), such as the semimetal graphene, semiconducting MoS2 and insulating h-BN, are currently the object of wide interests for next generation electronic applications. Despite recent progresses in large area synthesis of 2DMs, their electronic properties are still affected by nano- or micro-scale defects/inhomogeneities related to the specific growth process. Electrical scanning probe methods, such as conductive atomic force microscopy (C-AFM), are essential tools to investigate charge transport phenomena in 2DMs with nanoscale resolution. This chapter illustrates some case studies of C-AFM applications to graphene, MoS2 and h-BN. Furthermore, the results of the nanoscale electrical characterization have been correlated to the behavior of macroscopic devices fabricated on these materials.
AB - Two-dimensional materials (2DM), such as the semimetal graphene, semiconducting MoS2 and insulating h-BN, are currently the object of wide interests for next generation electronic applications. Despite recent progresses in large area synthesis of 2DMs, their electronic properties are still affected by nano- or micro-scale defects/inhomogeneities related to the specific growth process. Electrical scanning probe methods, such as conductive atomic force microscopy (C-AFM), are essential tools to investigate charge transport phenomena in 2DMs with nanoscale resolution. This chapter illustrates some case studies of C-AFM applications to graphene, MoS2 and h-BN. Furthermore, the results of the nanoscale electrical characterization have been correlated to the behavior of macroscopic devices fabricated on these materials.
UR - http://link.springer.com/10.1007/978-3-030-15612-1_10
UR - http://www.scopus.com/inward/record.url?scp=85070536338&partnerID=8YFLogxK
U2 - 10.1007/978-3-030-15612-1_10
DO - 10.1007/978-3-030-15612-1_10
M3 - Chapter
SP - 303
EP - 350
BT - NanoScience and Technology
PB - Springer [email protected]
ER -