Comprehensive Power Gain Assessment of GaN-SOI-FinFET for Improved RF/Wireless Performance Using TCAD

Ajay Kumar; Neha Gupta; Amit Kumar Goyal; Yehia Mahmoud Massoud

doi:10.3390/mi13091418

Comprehensive Power Gain Assessment of GaN-SOI-FinFET for Improved RF/Wireless Performance Using TCAD

Ajay Kumar, Neha Gupta, Amit Kumar Goyal, Yehia Mahmoud Massoud

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

In this work, we present a radio frequency (RF) assessment of the nanoscale gallium nitride-silicon-on-insulator fin field-effect transistor (GaN-SOI-FinFET). All the performances of the device were compared with GaN-FinFET and conventional FinFET (Conv. FinFET) simultaneously. All the results show that the power gains significantly improved in terms of Gma, Gms, Stern stability factor (SS), GMT, and intrinsic delay in comparison with conventional FinFET. Current gain and unilateral power gain were also evaluated for the extraction of fT (cut-off frequency) and fMAX, respectively. fT and fMAX were enhanced by 88.8% and 94.6%, respectively. This analysis was performed at several THz frequencies. Further, the parametric assessment was also performed in terms of gate length and oxide thickness to find the optimized value of gate length and oxide thickness. The implementation of GaN in the channel reduces the parasitic capacitance and paves the way for high-performance RF applications.

Original language	English (US)
Pages (from-to)	1418
Journal	Micromachines
Volume	13
Issue number	9
DOIs	https://doi.org/10.3390/mi13091418
State	Published - Aug 28 2022

Bibliographical note

KAUST Repository Item: Exported on 2022-12-26
Acknowledgements: The authors would like to acknowledge the research funding to the Innovative Technologies Laboratories (ITL) from King Abdullah University of Science and Technology (KAUST).

ASJC Scopus subject areas

Control and Systems Engineering
Electrical and Electronic Engineering
Mechanical Engineering

Access to Document

10.3390/mi13091418

https://repository.kaust.edu.sa/bitstream/10754/680823/1/micromachines-13-01418-v2.pdf

Cite this

@article{afed69269e8d43a5bc449afa6af9807b,

title = "Comprehensive Power Gain Assessment of GaN-SOI-FinFET for Improved RF/Wireless Performance Using TCAD",

abstract = "In this work, we present a radio frequency (RF) assessment of the nanoscale gallium nitride-silicon-on-insulator fin field-effect transistor (GaN-SOI-FinFET). All the performances of the device were compared with GaN-FinFET and conventional FinFET (Conv. FinFET) simultaneously. All the results show that the power gains significantly improved in terms of Gma, Gms, Stern stability factor (SS), GMT, and intrinsic delay in comparison with conventional FinFET. Current gain and unilateral power gain were also evaluated for the extraction of fT (cut-off frequency) and fMAX, respectively. fT and fMAX were enhanced by 88.8% and 94.6%, respectively. This analysis was performed at several THz frequencies. Further, the parametric assessment was also performed in terms of gate length and oxide thickness to find the optimized value of gate length and oxide thickness. The implementation of GaN in the channel reduces the parasitic capacitance and paves the way for high-performance RF applications.",

author = "Ajay Kumar and Neha Gupta and Goyal, {Amit Kumar} and Massoud, {Yehia Mahmoud}",

note = "KAUST Repository Item: Exported on 2022-12-26 Acknowledgements: The authors would like to acknowledge the research funding to the Innovative Technologies Laboratories (ITL) from King Abdullah University of Science and Technology (KAUST).",

year = "2022",

month = aug,

day = "28",

doi = "10.3390/mi13091418",

language = "English (US)",

volume = "13",

pages = "1418",

journal = "Micromachines",

issn = "2072-666X",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

number = "9",

}

TY - JOUR

T1 - Comprehensive Power Gain Assessment of GaN-SOI-FinFET for Improved RF/Wireless Performance Using TCAD

AU - Kumar, Ajay

AU - Gupta, Neha

AU - Goyal, Amit Kumar

AU - Massoud, Yehia Mahmoud

N1 - KAUST Repository Item: Exported on 2022-12-26 Acknowledgements: The authors would like to acknowledge the research funding to the Innovative Technologies Laboratories (ITL) from King Abdullah University of Science and Technology (KAUST).

PY - 2022/8/28

Y1 - 2022/8/28

N2 - In this work, we present a radio frequency (RF) assessment of the nanoscale gallium nitride-silicon-on-insulator fin field-effect transistor (GaN-SOI-FinFET). All the performances of the device were compared with GaN-FinFET and conventional FinFET (Conv. FinFET) simultaneously. All the results show that the power gains significantly improved in terms of Gma, Gms, Stern stability factor (SS), GMT, and intrinsic delay in comparison with conventional FinFET. Current gain and unilateral power gain were also evaluated for the extraction of fT (cut-off frequency) and fMAX, respectively. fT and fMAX were enhanced by 88.8% and 94.6%, respectively. This analysis was performed at several THz frequencies. Further, the parametric assessment was also performed in terms of gate length and oxide thickness to find the optimized value of gate length and oxide thickness. The implementation of GaN in the channel reduces the parasitic capacitance and paves the way for high-performance RF applications.

AB - In this work, we present a radio frequency (RF) assessment of the nanoscale gallium nitride-silicon-on-insulator fin field-effect transistor (GaN-SOI-FinFET). All the performances of the device were compared with GaN-FinFET and conventional FinFET (Conv. FinFET) simultaneously. All the results show that the power gains significantly improved in terms of Gma, Gms, Stern stability factor (SS), GMT, and intrinsic delay in comparison with conventional FinFET. Current gain and unilateral power gain were also evaluated for the extraction of fT (cut-off frequency) and fMAX, respectively. fT and fMAX were enhanced by 88.8% and 94.6%, respectively. This analysis was performed at several THz frequencies. Further, the parametric assessment was also performed in terms of gate length and oxide thickness to find the optimized value of gate length and oxide thickness. The implementation of GaN in the channel reduces the parasitic capacitance and paves the way for high-performance RF applications.

UR - http://hdl.handle.net/10754/680823

UR - https://www.mdpi.com/2072-666X/13/9/1418

UR - http://www.scopus.com/inward/record.url?scp=85138721015&partnerID=8YFLogxK

U2 - 10.3390/mi13091418

DO - 10.3390/mi13091418

M3 - Article

C2 - 36144042

SN - 2072-666X

VL - 13

SP - 1418

JO - Micromachines

JF - Micromachines

IS - 9

ER -

Comprehensive Power Gain Assessment of GaN-SOI-FinFET for Improved RF/Wireless Performance Using TCAD

Abstract

Bibliographical note

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this