Compound‐source molecular beam epitaxy (CSMBE) for ZnSe‐based lasers is developed. This method employs compound sources instead of elemental sources. The ZnCdSe/ZnSSe/ZnMgSSe separate confinement heterostructure is grown by this method. Continuous‐wave operation of the device by CSMBE at room temperature is demonstrated.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics