Compositional and morphological analysis of InxGa1-xN/GaN epilayers

Kun Li*, A. T.S. Wee, J. Lin, Z. C. Feng, E. W.P. Lau

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


The compositional and surface morphological properties of InxGa1-xN epilayers with different indium content grown on GaN sublayers have been studied by x-ray diffraction (XRD), RBS, XPS and atomic force microscopy (AFM). The InxGa1-xN epilayers were grown on GaN by metal-organic chemical vapour deposition. Reliable x values, ranging from 0.10±0.01 to 0.22±0.01, were determined by complementary XRD and RBS investigations, and no bulk phase segregation was found by XRD. The thickness of InxGa1-xN epilayers was determined by RBS to be between 70 and 260 nm. In contrast to the lack of phase segregation of InxGa1-xN in the bulk, surface In-Ga alloy species were detected by XPS even at low indium content (x to approximately 10%), and the amount of this species increases with indium content. Indium content was also found by AFM to have a significant influence on the surface morphologies of InxGa1-xN. The surface root-mean-square roughness increased from 0.82 nm at x = 0.10 to 9.0 nm at x = 0.23.

Original languageEnglish (US)
Pages (from-to)181-185
Number of pages5
JournalSurface and Interface Analysis
Issue number1
StatePublished - Jan 1 1999

ASJC Scopus subject areas

  • General Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


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