Composition dependence of the work function of Ta1-xAl xNymetal gates

H. N. Alshareef*, K. Choi, H. C. Wen, H. Luan, H. Harris, Y. Senzaki, P. Majhi, B. H. Lee, R. Jammy, S. Aguirre-Tostado, B. E. Gnade, R. M. Wallace

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

45 Scopus citations


It is shown that the work function of Ta1-x Alx Ny depends on the electrode and gate dielectric compositions. Specifically, the work function of Ta1-x Alx Ny increased with Si O2 content in the gate dielectric, reaching as high as 5.0 eV on Si O2; the work function was nearly 400 mV smaller on Hf O2. In addition, the work function decreased with increasing nitrogen content in the Ta1-x Alx Ny metal gate. Increasing Al concentration increased the work function up to about 15% Al, but the work function decreased for higher Al concentrations. Chemical analysis shows that Al-O bonding at the interface correlates with the observed work function values.

Original languageEnglish (US)
Article number072108
JournalApplied Physics Letters
Issue number7
StatePublished - 2006
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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