Composition dependence of the work function of Ta1-xAl xNymetal gates

H. N. Alshareef; K. Choi; H. C. Wen; H. Luan; H. Harris; Y. Senzaki; P. Majhi; B. H. Lee; R. Jammy; S. Aguirre-Tostado; B. E. Gnade; R. M. Wallace

doi:10.1063/1.2174836

Composition dependence of the work function of Ta_1-xAl _xN_ymetal gates

H. N. Alshareef^*, K. Choi, H. C. Wen, H. Luan, H. Harris, Y. Senzaki, P. Majhi, B. H. Lee, R. Jammy, S. Aguirre-Tostado, B. E. Gnade, R. M. Wallace

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

45 Scopus citations

Abstract

It is shown that the work function of Ta1-x Alx Ny depends on the electrode and gate dielectric compositions. Specifically, the work function of Ta1-x Alx Ny increased with Si O2 content in the gate dielectric, reaching as high as 5.0 eV on Si O2; the work function was nearly 400 mV smaller on Hf O2. In addition, the work function decreased with increasing nitrogen content in the Ta1-x Alx Ny metal gate. Increasing Al concentration increased the work function up to about 15% Al, but the work function decreased for higher Al concentrations. Chemical analysis shows that Al-O bonding at the interface correlates with the observed work function values.

Original language	English (US)
Article number	072108
Journal	Applied Physics Letters
Volume	88
Issue number	7
DOIs	https://doi.org/10.1063/1.2174836
State	Published - 2006
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Composition dependence of the work function of Ta1-xAl xNymetal gates",

abstract = "It is shown that the work function of Ta1-x Alx Ny depends on the electrode and gate dielectric compositions. Specifically, the work function of Ta1-x Alx Ny increased with Si O2 content in the gate dielectric, reaching as high as 5.0 eV on Si O2; the work function was nearly 400 mV smaller on Hf O2. In addition, the work function decreased with increasing nitrogen content in the Ta1-x Alx Ny metal gate. Increasing Al concentration increased the work function up to about 15% Al, but the work function decreased for higher Al concentrations. Chemical analysis shows that Al-O bonding at the interface correlates with the observed work function values.",

author = "Alshareef, {H. N.} and K. Choi and Wen, {H. C.} and H. Luan and H. Harris and Y. Senzaki and P. Majhi and Lee, {B. H.} and R. Jammy and S. Aguirre-Tostado and Gnade, {B. E.} and Wallace, {R. M.}",

year = "2006",

doi = "10.1063/1.2174836",

language = "English (US)",

volume = "88",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Composition dependence of the work function of Ta1-xAl xNymetal gates

AU - Alshareef, H. N.

AU - Choi, K.

AU - Wen, H. C.

AU - Luan, H.

AU - Harris, H.

AU - Senzaki, Y.

AU - Majhi, P.

AU - Lee, B. H.

AU - Jammy, R.

AU - Aguirre-Tostado, S.

AU - Gnade, B. E.

AU - Wallace, R. M.

PY - 2006

Y1 - 2006

N2 - It is shown that the work function of Ta1-x Alx Ny depends on the electrode and gate dielectric compositions. Specifically, the work function of Ta1-x Alx Ny increased with Si O2 content in the gate dielectric, reaching as high as 5.0 eV on Si O2; the work function was nearly 400 mV smaller on Hf O2. In addition, the work function decreased with increasing nitrogen content in the Ta1-x Alx Ny metal gate. Increasing Al concentration increased the work function up to about 15% Al, but the work function decreased for higher Al concentrations. Chemical analysis shows that Al-O bonding at the interface correlates with the observed work function values.

AB - It is shown that the work function of Ta1-x Alx Ny depends on the electrode and gate dielectric compositions. Specifically, the work function of Ta1-x Alx Ny increased with Si O2 content in the gate dielectric, reaching as high as 5.0 eV on Si O2; the work function was nearly 400 mV smaller on Hf O2. In addition, the work function decreased with increasing nitrogen content in the Ta1-x Alx Ny metal gate. Increasing Al concentration increased the work function up to about 15% Al, but the work function decreased for higher Al concentrations. Chemical analysis shows that Al-O bonding at the interface correlates with the observed work function values.

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U2 - 10.1063/1.2174836

DO - 10.1063/1.2174836

M3 - Article

AN - SCOPUS:32944474528

SN - 0003-6951

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - 072108

ER -

Composition dependence of the work function of Ta_1-xAl _xN_ymetal gates

Abstract

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