Competitive antiferromagnetic and ferromagnetic coupling in a CrSe/Fe/GaAs(111)B structure

C. Wang*, Bei Zhang, B. You, S. K. Lok, S. K. Chan, X. X. Zhang, G. K.L. Wong, I. K. Sou

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


A novel transition from the negative exchange bias (NEB) to the positive exchange bias (PEB), due to coexistent and competitive ferromagnetic and antiferromagnetic coupling in a molecular-beam-expitaxy-grown CrSe/Fe/GaAs(111)B structure, is described. The source of the unusual PEB effect was found to originate from the interface at the hetero-junction of Fe/GaAs(111)B while the NEB effect resulted from the CrSe/Fe bilayer structure. Phenomenological models are presented to explain the mechanism of the PEB effect and the varying asymmetry of the magnetic hysteresis of this structure as a function of the measured temperature.

Original languageEnglish (US)
Article number023916
JournalJournal of Applied Physics
Issue number2
StatePublished - 2008

Bibliographical note

Funding Information:
The MBE growth was performed in the Zheng Ge Ru Thin Film Physics Laboratory at HKUST. The authors are grateful for technical assistance from the staff in the Materials Characterization and Preparation Facilities at HKUST. The work described here was substantially supported by grants from the Research Grants Council of the Hong Kong Special Administrative Region, China (Project No. HKUST6064/02P and 605605).

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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