Competitive antiferromagnetic and ferromagnetic coupling in a CrSe/Fe/GaAs(111)B structure

C. Wang; B. Zhang; B. You; S. K. Lok; S. K. Chan; X. X. Zhang; G. K.L. Wong; I. K. Sou

doi:10.1063/1.2960500

Competitive antiferromagnetic and ferromagnetic coupling in a CrSe/Fe/GaAs(111)B structure

C. Wang^*, B. Zhang, B. You, S. K. Lok, S. K. Chan, X. X. Zhang, G. K.L. Wong, I. K. Sou

^*Corresponding author for this work

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Abstract

A novel transition from the negative exchange bias (NEB) to the positive exchange bias (PEB), due to coexistent and competitive ferromagnetic and antiferromagnetic coupling in a molecular-beam-expitaxy-grown CrSe/Fe/GaAs(111)B structure, is described. The source of the unusual PEB effect was found to originate from the interface at the hetero-junction of Fe/GaAs(111)B while the NEB effect resulted from the CrSe/Fe bilayer structure. Phenomenological models are presented to explain the mechanism of the PEB effect and the varying asymmetry of the magnetic hysteresis of this structure as a function of the measured temperature.

Original language	English (US)
Article number	023916
Journal	Journal of Applied Physics
Volume	104
Issue number	2
DOIs	https://doi.org/10.1063/1.2960500
State	Published - 2008

Bibliographical note

Funding Information:
The MBE growth was performed in the Zheng Ge Ru Thin Film Physics Laboratory at HKUST. The authors are grateful for technical assistance from the staff in the Materials Characterization and Preparation Facilities at HKUST. The work described here was substantially supported by grants from the Research Grants Council of the Hong Kong Special Administrative Region, China (Project No. HKUST6064/02P and 605605).

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.2960500

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title = "Competitive antiferromagnetic and ferromagnetic coupling in a CrSe/Fe/GaAs(111)B structure",

abstract = "A novel transition from the negative exchange bias (NEB) to the positive exchange bias (PEB), due to coexistent and competitive ferromagnetic and antiferromagnetic coupling in a molecular-beam-expitaxy-grown CrSe/Fe/GaAs(111)B structure, is described. The source of the unusual PEB effect was found to originate from the interface at the hetero-junction of Fe/GaAs(111)B while the NEB effect resulted from the CrSe/Fe bilayer structure. Phenomenological models are presented to explain the mechanism of the PEB effect and the varying asymmetry of the magnetic hysteresis of this structure as a function of the measured temperature.",

author = "C. Wang and B. Zhang and B. You and Lok, {S. K.} and Chan, {S. K.} and Zhang, {X. X.} and Wong, {G. K.L.} and Sou, {I. K.}",

note = "Funding Information: The MBE growth was performed in the Zheng Ge Ru Thin Film Physics Laboratory at HKUST. The authors are grateful for technical assistance from the staff in the Materials Characterization and Preparation Facilities at HKUST. The work described here was substantially supported by grants from the Research Grants Council of the Hong Kong Special Administrative Region, China (Project No. HKUST6064/02P and 605605).",

year = "2008",

doi = "10.1063/1.2960500",

language = "English (US)",

volume = "104",

journal = "Journal of Applied Physics",

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T1 - Competitive antiferromagnetic and ferromagnetic coupling in a CrSe/Fe/GaAs(111)B structure

AU - Wang, C.

AU - Zhang, B.

AU - You, B.

AU - Lok, S. K.

AU - Chan, S. K.

AU - Zhang, X. X.

AU - Wong, G. K.L.

AU - Sou, I. K.

N1 - Funding Information: The MBE growth was performed in the Zheng Ge Ru Thin Film Physics Laboratory at HKUST. The authors are grateful for technical assistance from the staff in the Materials Characterization and Preparation Facilities at HKUST. The work described here was substantially supported by grants from the Research Grants Council of the Hong Kong Special Administrative Region, China (Project No. HKUST6064/02P and 605605).

PY - 2008

Y1 - 2008

N2 - A novel transition from the negative exchange bias (NEB) to the positive exchange bias (PEB), due to coexistent and competitive ferromagnetic and antiferromagnetic coupling in a molecular-beam-expitaxy-grown CrSe/Fe/GaAs(111)B structure, is described. The source of the unusual PEB effect was found to originate from the interface at the hetero-junction of Fe/GaAs(111)B while the NEB effect resulted from the CrSe/Fe bilayer structure. Phenomenological models are presented to explain the mechanism of the PEB effect and the varying asymmetry of the magnetic hysteresis of this structure as a function of the measured temperature.

AB - A novel transition from the negative exchange bias (NEB) to the positive exchange bias (PEB), due to coexistent and competitive ferromagnetic and antiferromagnetic coupling in a molecular-beam-expitaxy-grown CrSe/Fe/GaAs(111)B structure, is described. The source of the unusual PEB effect was found to originate from the interface at the hetero-junction of Fe/GaAs(111)B while the NEB effect resulted from the CrSe/Fe bilayer structure. Phenomenological models are presented to explain the mechanism of the PEB effect and the varying asymmetry of the magnetic hysteresis of this structure as a function of the measured temperature.

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U2 - 10.1063/1.2960500

DO - 10.1063/1.2960500

M3 - Article

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SN - 0021-8979

VL - 104

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JF - Journal of Applied Physics

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ER -

Competitive antiferromagnetic and ferromagnetic coupling in a CrSe/Fe/GaAs(111)B structure

Abstract

Bibliographical note

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