Compensated readout for high-density MOS-gated memristor crossbar array

Mohammed A. Zidan; Hesham Omran; Ahmed Sultan Salem; Hossam Aly Hassan Fahmy; Khaled N. Salama

doi:10.1109/TNANO.2014.2363352

Compensated readout for high-density MOS-gated memristor crossbar array

Mohammed A. Zidan, Hesham Omran, Ahmed Sultan Salem, Hossam Aly Hassan Fahmy, Khaled N. Salama

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

Leakage current is one of the main challenges facing high-density MOS-gated memristor arrays. In this study, we show that leakage current ruins the memory readout process for high-density arrays, and analyze the tradeoff between the array density and its power consumption. We propose a novel readout technique and its underlying circuitry, which is able to compensate for the transistor leakage-current effect in the high-density gated memristor array.

Original language	English (US)
Pages (from-to)	3-6
Number of pages	4
Journal	IEEE Transactions on Nanotechnology
Volume	14
Issue number	1
DOIs	https://doi.org/10.1109/TNANO.2014.2363352
State	Published - Jan 2015

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KAUST Repository Item: Exported on 2020-10-01

ASJC Scopus subject areas

Computer Science Applications
Electrical and Electronic Engineering

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10.1109/TNANO.2014.2363352

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abstract = "Leakage current is one of the main challenges facing high-density MOS-gated memristor arrays. In this study, we show that leakage current ruins the memory readout process for high-density arrays, and analyze the tradeoff between the array density and its power consumption. We propose a novel readout technique and its underlying circuitry, which is able to compensate for the transistor leakage-current effect in the high-density gated memristor array.",

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AU - Omran, Hesham

AU - Salem, Ahmed Sultan

AU - Fahmy, Hossam Aly Hassan

AU - Salama, Khaled N.

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N2 - Leakage current is one of the main challenges facing high-density MOS-gated memristor arrays. In this study, we show that leakage current ruins the memory readout process for high-density arrays, and analyze the tradeoff between the array density and its power consumption. We propose a novel readout technique and its underlying circuitry, which is able to compensate for the transistor leakage-current effect in the high-density gated memristor array.

AB - Leakage current is one of the main challenges facing high-density MOS-gated memristor arrays. In this study, we show that leakage current ruins the memory readout process for high-density arrays, and analyze the tradeoff between the array density and its power consumption. We propose a novel readout technique and its underlying circuitry, which is able to compensate for the transistor leakage-current effect in the high-density gated memristor array.

UR - http://hdl.handle.net/10754/563991

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UR - http://www.scopus.com/inward/record.url?scp=84921047405&partnerID=8YFLogxK

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Compensated readout for high-density MOS-gated memristor crossbar array

Abstract

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