Keyphrases
Ga2O3
100%
Ohmic Contact
100%
Schottky
100%
Schottky Contact
100%
Electro-optical Characteristics
100%
Responsivity
66%
Ohmic
66%
Optoelectrical
66%
Metal-organic Chemical Vapor Deposition (MOCVD)
33%
Fast Response
33%
Optical Devices
33%
Carrier Transport
33%
Light Intensity
33%
Physical Mechanism
33%
Oxide Semiconductor
33%
Intensity-dependent
33%
High Photocurrent
33%
Electrical Devices
33%
Low Dark Current
33%
Different Voltage
33%
Ni-Au
33%
β-Ga2O3 Thin Film
33%
Photo-to-dark Current Ratio
33%
UV Light Intensity
33%
Physics
Thin Films
100%
Luminous Intensity
100%
Dark Current
100%
Optical Device
50%
Ultraviolet Radiation
50%
Photoelectric Emission
50%
Metalorganic Chemical Vapor Deposition
50%
Engineering
Ohmic Contacts
100%
Thin Films
100%
Responsivity
66%
Fast Response
33%
Photocurrent
33%
Metal Organic Chemical Vapor Deposition
33%
Current Ratio
33%
Oxide Semiconductor
33%
Material Science
Thin Films
100%
Metal-Organic Chemical Vapor Deposition
50%
Carrier Transport
50%
Oxide Semiconductor
50%
Optical Device
50%