Comparison of MOSFET characteristics between ALD and MOCVD TIN metal gate on Hf silicate

S. C. Song^*, B. H. Lee, Z. Zhang, K. Choi, S. H. Bae, H. Alshareef, P. Majhi, H. C. Wen, J. Bennett, B. Sassman, P. Zeitzoff

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review