Comparison of MOSFET characteristics between ALD and MOCVD TIN metal gate on Hf silicate

S. C. Song; B. H. Lee; Z. Zhang; K. Choi; S. H. Bae; H. Alshareef; P. Majhi; H. C. Wen; J. Bennett; B. Sassman; P. Zeitzoff

Comparison of MOSFET characteristics between ALD and MOCVD TIN metal gate on Hf silicate

S. C. Song^*, B. H. Lee, Z. Zhang, K. Choi, S. H. Bae, H. Alshareef, P. Majhi, H. C. Wen, J. Bennett, B. Sassman, P. Zeitzoff

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

Abstract

In this report, MOSFET characteristics between ALD (Atomic Layer Deposition) and CVD (Chemical Vapor Deposition) TiN metal gate on high-k dielectric are compared. Despite many similarities between these two techniques, we found clear differences in device characteristics, such as EOT, mobility, dopant diffusion, and defect generation during deposition. ALD TiN results in thicker EOT due to higher process temperature compared to CVD TiN, but has stonger resistnace to dopant diffusion and provides better interfacial characteristics, thus better device performance.

Original language	English (US)
Pages	419-424
Number of pages	6
State	Published - 2005
Externally published	Yes
Event	207th ECS Meeting - Quebec, Canada Duration: May 16 2005 → May 20 2005

Other

Other	207th ECS Meeting
Country/Territory	Canada
City	Quebec
Period	05/16/05 → 05/20/05

ASJC Scopus subject areas

General Engineering

Cite this

@conference{3a81da2ccec145e385f4ec61706aa61e,

title = "Comparison of MOSFET characteristics between ALD and MOCVD TIN metal gate on Hf silicate",

abstract = "In this report, MOSFET characteristics between ALD (Atomic Layer Deposition) and CVD (Chemical Vapor Deposition) TiN metal gate on high-k dielectric are compared. Despite many similarities between these two techniques, we found clear differences in device characteristics, such as EOT, mobility, dopant diffusion, and defect generation during deposition. ALD TiN results in thicker EOT due to higher process temperature compared to CVD TiN, but has stonger resistnace to dopant diffusion and provides better interfacial characteristics, thus better device performance.",

author = "Song, {S. C.} and Lee, {B. H.} and Z. Zhang and K. Choi and Bae, {S. H.} and H. Alshareef and P. Majhi and Wen, {H. C.} and J. Bennett and B. Sassman and P. Zeitzoff",

year = "2005",

language = "English (US)",

pages = "419--424",

note = "207th ECS Meeting ; Conference date: 16-05-2005 Through 20-05-2005",

}

TY - CONF

T1 - Comparison of MOSFET characteristics between ALD and MOCVD TIN metal gate on Hf silicate

AU - Song, S. C.

AU - Lee, B. H.

AU - Zhang, Z.

AU - Choi, K.

AU - Bae, S. H.

AU - Alshareef, H.

AU - Majhi, P.

AU - Wen, H. C.

AU - Bennett, J.

AU - Sassman, B.

AU - Zeitzoff, P.

PY - 2005

Y1 - 2005

N2 - In this report, MOSFET characteristics between ALD (Atomic Layer Deposition) and CVD (Chemical Vapor Deposition) TiN metal gate on high-k dielectric are compared. Despite many similarities between these two techniques, we found clear differences in device characteristics, such as EOT, mobility, dopant diffusion, and defect generation during deposition. ALD TiN results in thicker EOT due to higher process temperature compared to CVD TiN, but has stonger resistnace to dopant diffusion and provides better interfacial characteristics, thus better device performance.

AB - In this report, MOSFET characteristics between ALD (Atomic Layer Deposition) and CVD (Chemical Vapor Deposition) TiN metal gate on high-k dielectric are compared. Despite many similarities between these two techniques, we found clear differences in device characteristics, such as EOT, mobility, dopant diffusion, and defect generation during deposition. ALD TiN results in thicker EOT due to higher process temperature compared to CVD TiN, but has stonger resistnace to dopant diffusion and provides better interfacial characteristics, thus better device performance.

UR - http://www.scopus.com/inward/record.url?scp=31744448474&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:31744448474

SP - 419

EP - 424

T2 - 207th ECS Meeting

Y2 - 16 May 2005 through 20 May 2005

ER -

Comparison of MOSFET characteristics between ALD and MOCVD TIN metal gate on Hf silicate

Abstract

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ASJC Scopus subject areas

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