Abstract
A new type of HF solution, HF-acetonitrile (MeCN), has been employed to produce 10-30 μm thick porous silicon (P-Si) layers by photoelectrochemical etching of different types of Si wafers, Si(100), Si(111) and polycrystalline Si, with different resistivities. A combined optical, surface and nuclear microscopic assessment of these P-Si layers was performed using photoluminescence (PL), Raman scattering, X-ray photoelectron spectroscopy and Rutherford backscattering spectroscopy. With increasing resistivity of the Si(100) wafers, the P-Si layers show a slight blue shift of their visible light emission peak energy, an up shift of the peak position and a narrowing of the band width of the dominant Raman band, and a decrease in the amount of residual elemental Si on the surface. Those Si(111) wafers, etched in HF-MeCN, showed no porous structures and no visible light emission.
Original language | English (US) |
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Pages (from-to) | 3254-3260 |
Number of pages | 7 |
Journal | Surface and Coatings Technology |
Volume | 200 |
Issue number | 10 SPEC. ISS. |
DOIs | |
State | Published - Feb 24 2006 |
Externally published | Yes |
Bibliographical note
Funding Information:We acknowledge the help and support from Drs. Z. Chen, A. Rohatgi, A. T. S. Wee, J. Lin, K. T. Yu and S. Perkowitz. The work at National Taiwan University was supported by funds from National Science Council of Republic of China, NSC 93-2218-E-002-011 and 93-2215-E-002-035.
Keywords
- PL
- Porous silicon
- RBS
- Raman
- Raman scattering
- SEM
- XPS
ASJC Scopus subject areas
- General Chemistry
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry